UPC3210TB

更新时间： 2024-10-29 22:35:15

品牌	Logo	应用领域
日电电子 - NEC		放大器
页数	文件大小	规格书
16页	89K
描述
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

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UPC3210TB 数据手册

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

µPC3210TB

5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

DESCRIPTION

The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The µPC3210TB is

suitable to systems required wideband operation from HF to L band.

This IC is manufactured using NEC’s 20 GHz f^TNESAT™III silicon bipolar process. This process uses silicon

nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and

prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

•

High-density surface mounting: 6-pin super minimold package

Supply voltage

Wideband response

Power gain

: V^CC= 4.5 to 5.5 V

: f^u= 2.3 GHz TYP. @3 dB bandwidth

: G^P= 20 dB TYP. @f = 1.5 GHz

: NF = 3.4 dB TYP. @f = 1.5 GHz

Noise figure

APPLICATION

Systems required wideband operation from HF to 2.0 GHz

•

ORDERING INFORMATION

Part Number

Package

6-pin super minimold

Marking

C2X

Supplying Form

Embossed tape 8 mm wide.

µPC3210TB-E3

1, 2, 3 pins face to perforation side of the tape.

Qty 3 kp/reel.

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample

order: µPC3210TB)

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P13593EJ2V0DS00 (2nd edition)

Date Published May 1999 N CP(K)

Printed in Japan

The mark

shows major revised points.

1998, 1999

12 3 4 5 6 7...16

中文翻译

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