3 V, 900 MHz
Si MMIC AMPLIFIER
UPC2747T
NOISE FIGURE AND
GAIN vs. FREQUENCY
VCC = 3.0 V, ICC = 5 mA
FEATURES
• LOW VOLTAGE - LOW CURRENT: 5 mA at 3 V
• LOW POWER CONSUMPTION: 15 mW TYP
• SUPER SMALL PACKAGE
14
12
10
8
4.5
4.0
3.5
3.0
GS
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2747T is a Silicon Monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with fT approaching 20 GHz.
This amplifier was designed for 900 MHz receivers in cellular
and cordless telephone applications. Operating on a 3 volt
supply (1.8 volt minimum) this IC is ideally suited for hand-
held, portable designs.
NF
0
1000
2000
Frequency, f (MHz)
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50 Ω)
PART NUMBER
UPC2747T
PACKAGE OUTLINE
TO6
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICC
Circuit Current (no signal)
VCC = 3.0 V
VCC = 1.8 V
mA
mA
3.8
5.0
3.0
7.0
GS
Small Signal Gain,
f = 900 MHz, VCC = 3.0 V
f = 900 MHz, VCC = 1.8 V
dB
dB
9
12
5.5
14
1
fU
Upper Limit Operating Frequency, VCC = 3.0 V
VCC = 1.8 V
GHz
GHz
1.5
-9.5
1.8
1.8
PSAT
NF
Saturated Output Power,
f = 900 MHz, , VCC = 3.0 V
dBm
dBm
-7
-14
f = 900 MHz, VCC = 1.8 V
Noise Figure,
f = 900 MHz, VCC = 3.0 V
f = 900 MHz, VCC = 1.8 V
dB
dB
3.3
5.2
4.5
RLIN
RLOUT
ISOL
OIP3
Input Return Loss,
Output Return Loss,
Isolation,
f = 900 MHz, VCC = 3.0 V
f = 900 MHz, VCC = 1.8 V
dB
dB
11
7
14
11
f = 900 MHz, VCC = 3.0 V
f = 900 mHz, VCC = 1.8 V
dB
dB
10
13
f = 900 MHz, VCC = 3.0 V
f = 900 MHz, VCC = 1.8 V
dB
dB
35
40
34
SSB Output Third Order Intercept, f1 = 500 MHz, f2 = 510 MHz, VCC = 3.0 V
f1 = 900 MHz, f2 = 902 MHz, VCC = 3.0 V
dBm
dBm
dBm
dBm
-3
-3
-2
f1 = 1000 MHz, f2 = 1010 MHz, VCC = 3.0 V
f1 = 900 MHz, f2 = 902 MHz, VCC = 1.8 V
-10
RTH (J-A)
Thermal Resistance (Junction to Ambient)
Free Air
°C/W
°C/W
620
230
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
Note:
1.The gain at fU is 3 dB down from the gain at 100 MHz.
California Eastern Laboratories