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UPC2747TB-A PDF预览

UPC2747TB-A

更新时间: 2024-01-23 18:50:56
品牌 Logo 应用领域
日电电子 - NEC 放大器
页数 文件大小 规格书
5页 67K
描述
Narrow Band Low Power Amplifier, 1800MHz Max, 2 X 1.25 MM, 0.90 MM HEIGHT, SUPER MINIMOLD, 6 PIN

UPC2747TB-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:compliant风险等级:5.83
其他特性:HIGH RELIABILITY特性阻抗:50 Ω
构造:COMPONENT增益:9 dB
最大输入功率 (CW):JESD-609代码:e6
最大工作频率:1800 MHz最高工作温度:85 °C
最低工作温度:-40 °C射频/微波设备类型:NARROW BAND LOW POWER
端子面层:Tin/Bismuth (Sn/Bi)

UPC2747TB-A 数据手册

 浏览型号UPC2747TB-A的Datasheet PDF文件第2页浏览型号UPC2747TB-A的Datasheet PDF文件第3页浏览型号UPC2747TB-A的Datasheet PDF文件第4页浏览型号UPC2747TB-A的Datasheet PDF文件第5页 
3 V, 900 MHz  
Si MMIC AMPLIFIER  
UPC2747T  
NOISE FIGURE AND  
GAIN vs. FREQUENCY  
VCC = 3.0 V, ICC = 5 mA  
FEATURES  
• LOW VOLTAGE - LOW CURRENT: 5 mA at 3 V  
• LOW POWER CONSUMPTION: 15 mW TYP  
• SUPER SMALL PACKAGE  
14  
12  
10  
8
4.5  
4.0  
3.5  
3.0  
GS  
• TAPE AND REEL PACKAGING OPTION AVAILABLE  
DESCRIPTION  
The UPC2747T is a Silicon Monolithic integrated circuit which  
is manufactured using the NESAT III process. The NESAT III  
process produces transistors with fT approaching 20 GHz.  
This amplifier was designed for 900 MHz receivers in cellular  
and cordless telephone applications. Operating on a 3 volt  
supply (1.8 volt minimum) this IC is ideally suited for hand-  
held, portable designs.  
NF  
0
1000  
2000  
Frequency, f (MHz)  
NEC's stringent quality assurance and test procedures en-  
sure the highest reliability and performance.  
ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50 )  
PART NUMBER  
UPC2747T  
PACKAGE OUTLINE  
TO6  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
ICC  
Circuit Current (no signal)  
VCC = 3.0 V  
VCC = 1.8 V  
mA  
mA  
3.8  
5.0  
3.0  
7.0  
GS  
Small Signal Gain,  
f = 900 MHz, VCC = 3.0 V  
f = 900 MHz, VCC = 1.8 V  
dB  
dB  
9
12  
5.5  
14  
1
fU  
Upper Limit Operating Frequency, VCC = 3.0 V  
VCC = 1.8 V  
GHz  
GHz  
1.5  
-9.5  
1.8  
1.8  
PSAT  
NF  
Saturated Output Power,  
f = 900 MHz, , VCC = 3.0 V  
dBm  
dBm  
-7  
-14  
f = 900 MHz, VCC = 1.8 V  
Noise Figure,  
f = 900 MHz, VCC = 3.0 V  
f = 900 MHz, VCC = 1.8 V  
dB  
dB  
3.3  
5.2  
4.5  
RLIN  
RLOUT  
ISOL  
OIP3  
Input Return Loss,  
Output Return Loss,  
Isolation,  
f = 900 MHz, VCC = 3.0 V  
f = 900 MHz, VCC = 1.8 V  
dB  
dB  
11  
7
14  
11  
f = 900 MHz, VCC = 3.0 V  
f = 900 mHz, VCC = 1.8 V  
dB  
dB  
10  
13  
f = 900 MHz, VCC = 3.0 V  
f = 900 MHz, VCC = 1.8 V  
dB  
dB  
35  
40  
34  
SSB Output Third Order Intercept, f1 = 500 MHz, f2 = 510 MHz, VCC = 3.0 V  
f1 = 900 MHz, f2 = 902 MHz, VCC = 3.0 V  
dBm  
dBm  
dBm  
dBm  
-3  
-3  
-2  
f1 = 1000 MHz, f2 = 1010 MHz, VCC = 3.0 V  
f1 = 900 MHz, f2 = 902 MHz, VCC = 1.8 V  
-10  
RTH (J-A)  
Thermal Resistance (Junction to Ambient)  
Free Air  
°C/W  
°C/W  
620  
230  
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB  
Note:  
1.The gain at fU is 3 dB down from the gain at 100 MHz.  
California Eastern Laboratories  

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