Datasheet > UPC2726T_00

UPC2726T_00

更新时间： 2024-10-14 04:26:55

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
4页	45K
描述
1.6 GHz DIFFERENTIAL WIDEBAND SILICON WIDEBAND SILICON

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UPC2726T_00 数据手册

1.6 GHz DIFFERENTIAL

WIDEBAND SILICON

RFIC AMPLIFIER

UPC2726T

NOISE FIGURE AND GAIN

vs. FREQUENCY AND VOLTAGE

FEATURES

•

HIGH GAIN: 15 dB Typical at 400 MHz

WIDEBAND FREQUENCY RESPONSE: 1.6 GHz TYP

SINGLE POSITIVE DC SUPPLY

CC = 5.0 V

3.0 V

2.0 V

SUPER SMALL PACKAGE

TAPE AND REEL PACKAGING OPTION AVAILABLE

CC = 2.0 V

DESCRIPTION

The UPC2726T is a Silicon RF Integrated Citrcuit which is

manufactured using the NESAT III process. The NESAT III

process produces transistors with fT approaching 20 GHz.

This amplifier was designed as a buffer amplifier for circuits

requiringdifferentialinputsandoutputsforincreasedcommon-

mode rejection.

CC = 4.5--5.5 V

0.1

0.3

1.0

2.0 3.0

Frequency, f (GHz)

GAIN vs. FREQUENCY

AND TEMPERATURE

NEC's stringent quality assurance and test procedures ensure

the highest reliability and performance.

-40°C

25°C

85°C

CC = 5.0 V

0.1

0.3

1.0

2.0 3.0

Frequency, f (GHz)

ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50 Ω, f = 400 MHz)

UPC2726T

PART NUMBER

PACKAGE OUTLINE

VCC = 5 V

VCC = 2 V

TYP

SYMBOLS

ICC

PARAMETERS AND CONDITIONS

Circuit Current, (No Signal)

UNITS

MIN

TYP

11.5

MAX

MIN

MAX

2.5

4.5

5.1

2.4

-14

Small Signal Gain

Noise Figure

4.5

1.6

-2

Upper limit Operating Frequency¹

Saturated Output Power

Input Return Loss

GHz

dBm

1.0

-5

PSAT

RLIN

RLOUT

ISOL

OIP3

Output Return Loss

Isolation

-10

Output 3rd Order Intercept Point²

dBm

-2.5

Notes:

1. The Gain at fu is 3 dB down from the gain at 400 MHz.

2. f1 = 400 MHz, f2 = 402 MHz, single side band.

California Eastern Laboratories

12 3 4

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