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UPC2709T-E3 PDF预览

UPC2709T-E3

更新时间: 2024-11-10 22:41:43
品牌 Logo 应用领域
日电电子 - NEC 射频和微波射频放大器微波放大器
页数 文件大小 规格书
6页 98K
描述
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

UPC2709T-E3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.76
Is Samacsys:N其他特性:HIGH RELIABILITY
特性阻抗:50 Ω构造:COMPONENT
增益:21 dB最大输入功率 (CW):10 dBm
JESD-609代码:e0最大工作频率:2300 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:WIDE BAND LOW POWER端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

UPC2709T-E3 数据手册

 浏览型号UPC2709T-E3的Datasheet PDF文件第2页浏览型号UPC2709T-E3的Datasheet PDF文件第3页浏览型号UPC2709T-E3的Datasheet PDF文件第4页浏览型号UPC2709T-E3的Datasheet PDF文件第5页浏览型号UPC2709T-E3的Datasheet PDF文件第6页 
2.5 GHz SILICON MMIC UPC2709T  
WIDE-BAND AMPLIFIER UPC2712T  
GAIN vs. FREQUENCY  
FEATURES  
30  
• WIDE FREQUENCY RESPONSE: 2.5 GHz  
• HIGH GAIN: 23 dB (UPC2709T)  
25  
SATURATED OUTPUT POWER:  
UPC2709  
+11.5 dBm (UPC2709T)  
• INTERNAL CURRENT REGULATION MINIMIZES GAIN  
CHANGE OVER TEMPERATURE  
20  
UPC2712  
• 5 V SINGLE SUPPLY VOLTAGE  
• SUPER SMALL PACKAGE  
15  
10  
TAPE AND REEL PACKAGING OPTION AVAILABLE  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
DESCRIPTION  
Frequency, f (GHz)  
The UPC2709T and UPC2712T are Silicon Monolithic inte-  
grated circuits manufactured using the NESAT III process.  
These devices are suitable as buffer amplifiers for wide-band  
applications. They are designed for low cost gain stages in  
cellular radios, GPS receivers, DBS tuners, PCN, and test/  
measurement equipment.  
NEC's stringent quality assurance and test procedures en-  
sure the highest reliability and performance.  
ELECTRICAL CHARACTERISTICS (TA = 25°C, f = 1 GHz, VCC = 5 V)  
PART NUMBER  
PACKAGE OUTLINE  
UPC2709T  
T06  
UPC2712T  
T06  
SYMBOLS  
PARAMETERS AND CONDITIONS  
Circuit Current (no signal)  
UNITS  
mA  
MIN  
19  
TYP  
25  
MAX  
32  
MIN  
9
TYP  
12  
MAX  
15  
ICC  
GS  
fU  
Small Signal Gain  
dB  
21  
23  
26.5  
18  
20  
23.5  
Upper Limit Operating Frequency  
(The gain at fU is 3 dB down from the gain at 0.1 GHz)  
GHz  
dB  
2.0  
9
2.3  
2.2  
0
2.6  
GS  
Gain Flatness, f = 0.1 ~ 1.8 GHz  
f = 0.1 ~ 2.0 GHz  
±1.0  
±0.8  
3
PSAT  
P1dB  
NF  
Saturated Output Power  
Output Power at 1 dB Compression Point  
Noise Figure  
dBm  
dBm  
dB  
11.5  
7.5  
5
-2.5  
4.5  
12  
6.5  
6
RLIN  
Input Return Loss  
dB  
7
10  
9
RLOUT  
ISOL  
GT  
Output Return Loss  
dB  
dB  
7
10  
31  
10  
28  
13  
33  
Isolation  
26  
Gain -Temperature Coefficient  
Thermal Resistance (Junction to Ambient)  
dB/°C  
°C/W  
-0.002  
-0.003  
RTH  
200  
200  
California Eastern Laboratories  

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