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UPC1675G-A

更新时间： 2024-11-18 13:15:11

品牌	Logo	应用领域
日电电子 - NEC		射频和微波射频放大器微波放大器
页数	文件大小	规格书
8页	44K
描述
Wide Band Low Power Amplifier, 1900MHz Max, MINIMOLD, 4 PIN

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中文翻译

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技术参数
数据手册

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UPC1675G-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.69
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	10 dB	JESD-609代码：	e6
最大工作频率：	1900 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
端子面层：	Tin/Bismuth (Sn/Bi)	Base Number Matches：	1

UPC1675G-A 数据手册

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

µPC1675G

GENERAL PURPOSE WIDE BNAD AMPLIFIER

DESCRIPTION

The µPC1675G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed

for use as a wide bnad amplifier convers from HF band to UHF band.

FEATURES

•

Excellent frequency response : 1.9 GHz TYP.

@ 3 dB down below flat gain.

High isolation.

•

Super small package.

Uni- and low voltage operation : V^CC= 5 V

Input and output matching 50 Ω.

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

Supply Voltage

V^CC

P^T

Total Power Dissipation

Operating Temperature

Storage Temperature

200

°C

T^opt

T^stg

−40 to +85

−55 to +150 °C

ELECTRICAL CHARACTERISTICS (T^A= 25 °C, V^CC= 5 V)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

No Signal

Circuit Current

I^CC

Power Gain

G^P

f = 0.5 GHz

Noise Figure

5.5

1.9

7.0

f = 0.5 GHz

Upper Limit Operating Frequency

Isolation

f^u

1.6

GHz

3 dB down below flat gain

f = 0.5 GHz

ISL

Input Return Loss

Output Return Loss

Maximum Output Level

RLⁱⁿ

RL^out

P^O

f = 0.5 GHz

dBm

f = 0.5 GHz, Pⁱⁿ= 0 dBm

NEC cannot assume any responsibility for any circuits shown or represent that

they are free from patent infringement.

Document No. P12446EJ2V0DS00 (2nd edition)

(Previous No. IC-1890)

Date Published March 1997 N

Printed in Japan

1989

12 3 4 5 6 7 8

中文翻译

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