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UPA811T-T1 PDF预览

UPA811T-T1

更新时间: 2024-09-27 12:16:59
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体放大器小信号双极晶体管射频小信号双极晶体管
页数 文件大小 规格书
8页 219K
描述
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

UPA811T-T1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:PLASTIC, SO-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.09Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.035 A
基于收集器的最大容量:0.7 pF集电极-发射极最大电压:10 V
配置:SEPARATE, 2 ELEMENTS最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G6JESD-609代码:e0
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):8000 MHz
Base Number Matches:1

UPA811T-T1 数据手册

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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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