生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.12 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.035 A | 基于收集器的最大容量: | 0.7 pF |
集电极-发射极最大电压: | 10 V | 配置: | SEPARATE, 2 ELEMENTS |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 8000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA811T-GB-A | RENESAS |
获取价格 |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SO-6 |
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UPA811T-GB-A | NEC |
获取价格 |
暂无描述 |
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UPA811TGB-T1 | RENESAS |
获取价格 |
TRANSISTOR,BJT,PAIR,NPN,10V V(BR)CEO,35MA I(C),SOT-363 |
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UPA811T-T1 | RENESAS |
获取价格 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
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UPA811T-T1 | NEC |
获取价格 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4 |
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UPA811T-T1-A | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
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UPA811T-T1-A | RENESAS |
获取价格 |
UPA811T-T1-A |
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UPA811T-T1-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Sil |
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UPA811T-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Sil |
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UPA811T-T1FB | RENESAS |
获取价格 |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SO-6 |
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