是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | PLASTIC, SO-6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.12 |
Is Samacsys: | N | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.035 A | 基于收集器的最大容量: | 0.7 pF |
集电极-发射极最大电压: | 10 V | 配置: | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE): | 125 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 2 |
端子数量: | 6 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.2 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 8000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA811T-GB-A | RENESAS |
获取价格 |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SO-6 | |
UPA811T-GB-A | NEC |
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暂无描述 | |
UPA811TGB-T1 | RENESAS |
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TRANSISTOR,BJT,PAIR,NPN,10V V(BR)CEO,35MA I(C),SOT-363 | |
UPA811T-T1 | RENESAS |
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HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |
UPA811T-T1 | NEC |
获取价格 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4 | |
UPA811T-T1-A | CEL |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | |
UPA811T-T1-A | RENESAS |
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UPA811T-T1-A | |
UPA811T-T1-A | NEC |
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RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Sil | |
UPA811T-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Sil | |
UPA811T-T1FB | RENESAS |
获取价格 |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SO-6 |