Datasheet > UPA811T-FB

UPA811T-FB

更新时间： 2023-01-02 13:44:13

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	43K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6

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中文翻译

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数据手册

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UPA811T-FB 数据手册

DATA SHEET

SILICON TRANSISTOR

µPA811T

HIGH-FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD

The µPA811T has built-in 2 low-voltage transistors which are designed to

PACKAGE DRAWINGS

amplify low noise in the VHF band to the UHF band.

(Unit: m m )

2.1±0.1

FEATURES

1.25±0.1

•

Low Noise

NF = 1.9 dB TYP. @ f = 2 GHz, V^CE= 1 V, IC = 3 mA

•

High Gain

|S^21e|²= 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA

A Small Mini Mold Package Adopted

Built-in 2 Transistors (2 × 2SC4228)

•

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

µPA811T

Loose products

(50 PCS)

Embossed tape 8 mm wide. Pin 6 (Q1

Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)

face to perforation side of the tape.

µPA811T-T1

Taping products

(3 KPCS/Reel)

PIN CONFIGURATION (Top View)

Remark If you require an evaluation sample, please contact an NEC Sales

Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

1.5

PIN CONNECTIONS

1. Collector (Q1)

2. Base (Q2)

4. Emitter (Q2)

5. Emitter (Q1)

6. Base (Q1)

Total Power Dissipation

150 in 1 element

200 in 2 elements

Note

3. Collector (Q2)

Junction Temperature

Storage Temperature

150

˚C

Tstg

–65 to +150

Note 110 mW must not be exceeded in 1 element.

The inform ation in this docum ent is subject to change w ithout notice.

Document No. P11464EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

1996

12 3 4 5 6

中文翻译

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与UPA811T-FB相关器件

型号	品牌	获取价格	描述	数据表
UPA811T-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Sil
UPA811T-GB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Sil
UPA811T-GB	RENESAS	获取价格	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SO-6
UPA811T-GB-A	RENESAS	获取价格	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SO-6
UPA811T-GB-A	NEC	获取价格	暂无描述
UPA811TGB-T1	RENESAS	获取价格	TRANSISTOR,BJT,PAIR,NPN,10V V(BR)CEO,35MA I(C),SOT-363
UPA811T-T1	RENESAS	获取价格	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
UPA811T-T1	NEC	获取价格	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4
UPA811T-T1-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA811T-T1-A	RENESAS	获取价格	UPA811T-T1-A