Datasheet > UPA811T

UPA811T

更新时间： 2024-09-15 03:57:03

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管放大器
页数	文件大小	规格书
4页	158K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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UPA811T 数据手册

NPN SILICON HIGH

FREQUENCY TRANSISTOR

UPA811T

OUTLINE DIMENSIONS (Units in mm)

FEATURES

•

SMALL PACKAGE STYLE:

2 NE680 Die in a 2 mm x 1.25 mm package

PACKAGE OUTLINE S06

(Top View)

LOW NOISE FIGURE:

NF = 1.9 dB TYP at 2 GHz

2.1 ± 0.1

HIGH GAIN:

|S21E|²= 7.5 dB TYP at 2 GHz

1.25 ± 0.1

EXCELLENT LOW VOLTAGE, LOW CURRENT

PERFORMANCE

0.65

2.0 ± 0.2

0.2 (All Leads)

DESCRIPTION

1.3

NEC's UPA811T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

fT, low voltage bias and small size make this device ideally

suited for pager and other hand-held wireless applications.

0.9 ± 0.1

ABSOLUTE MAXIMUM RATINGS¹(TA = 25°C)

0.7

+0.10

- 0.05

0.15

SYMBOLS

VCBO

VCEO

VEBO

PARAMETERS

UNITS

RATINGS

0 ~ 0.1

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

1.5

PIN OUT

1. Collector Transistor 1

2. Base Transistor 2

3. Collector Transistor 2

4. Emitter Transistor 2

5. Emitter Transistor 1

6. Base Transistor 1

Total Power Dissipation

1 Die

2 Die

110

200

TSTG

Junction Temperature

Storage Temperature

°C

150

Note:

-65 to +150

Pin 3 is identified with a circle on the bottom of the package.

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA811T

S06

SYMBOLS

ICBO

PARAMETERS AND CONDITIONS

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

UNITS

µA

MIN

TYP

MAX

1.0

IEBO

µA

1.0

hFE

Forward Current Gain at VCE = 3 V, IC = 5 mA

Gain Bandwidth at VCE = 3 V, IC = 5 mA

120

8.0

0.3

7.5

1.9

200

Cre²

GHz

5.5

Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz

Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz

0.7

3.2

|S21E|²

5.5

Notes:

1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA811T-T1, 3K per reel.

California Eastern Laboratories

12 3 4

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与UPA811T相关器件

型号	品牌	获取价格	描述	数据表
UPA811T_09	CEL	获取价格	NPN SILICON HIGH
UPA811T_V1	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA811T-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Sil
UPA811T-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Sil
UPA811T-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Sil
UPA811T-GB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Sil
UPA811T-GB	RENESAS	获取价格	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SO-6
UPA811T-GB-A	RENESAS	获取价格	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SO-6
UPA811T-GB-A	NEC	获取价格	暂无描述
UPA811TGB-T1	RENESAS	获取价格	TRANSISTOR,BJT,PAIR,NPN,10V V(BR)CEO,35MA I(C),SOT-363

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