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UPA802TC PDF预览

UPA802TC

更新时间: 2024-01-01 19:32:01
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
22页 110K
描述
Discrete

UPA802TC 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.27最大集电极电流 (IC):0.065 A
基于收集器的最大容量:0.9 pF集电极-发射极最大电压:10 V
配置:SEPARATE, 2 ELEMENTS最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G6JESD-609代码:e6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):7000 MHz

UPA802TC 数据手册

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DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA802TC  
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)  
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
FEATURES  
Built-in low phase distortion, high-gain transistor  
NF = 1.4 dB TYP., S21e 2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz  
Built-in 2 transistors (2 × 2SC5433)  
Flat-lead 6-pin thin-type ultra super minimold package  
BUILT-IN TRANSISTORS  
Q1, Q2  
3-pin thin-type ultra super minimold part No.  
2SC5433  
ORDERING INFORMATION  
Part Number  
Quantity  
50 pcs (Non reel)  
3 kpcs/reel  
Supplying Form  
µPA802TC  
µPA802TC-T1  
• 8 mm wide embossed taping  
• Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)  
face the perforation side of the tape  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10129EJ01V0DS (1st edition)  
Date Published April 2002 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2002  

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