UPA802T-T1FB

更新时间： 2024-01-02 04:55:37

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
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中文翻译

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数据手册

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UPA802T-T1FB 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

µPA802T

HIGH-FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) MINI MOLD

The µPA802T has built-in 2 low-voltage transistors which are designed

PACKAGE DRAWINGS

to am plify low noise in the VHF band to the UHF band.

(Unit: m m )

2.1±0.1

FEATURES

1.25±0.1

•

Low Noise

NF = 1.4 dB TYP. @ f = 1 GHz, V^CE= 3 V, IC = 7 m A

•

High Gain

|S^21e|²= 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 m A

A Mini Mold Package Adopted

Built-in 2 Transistors (2 × 2SC4227)

•

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

µPA802T

Loose products

(50 PCS)

Em bossed tape 8 m m wide. Pin 6 (Q1

Base), Pin 5 (Q2 Base), Pin 4 (Q2 Em itter)

face to perforation side of the tape.

PIN CONFIGURATION (Top View )

µPA802T-T1

Taping products

(3 KPCS/Reel)

Rem ark If you require an evaluation sam ple, please contact an NEC

Sales Representative. (Unit sam ple quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

4. Emitter (Q2)

5. Base (Q2)

6. Base (Q1)

PARAMETER

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

3. Collector (Q2)

Collector to Base Voltage

Collector to Em itter Voltage

Em itter to Base Voltage

Collector Current

1.5

m A

m W

Total Power Dissipation

150 in 1 elem ent

200 in 2 elem ents

Note

J unction Tem perature

Storage Tem perature

150

˚C

Tstg

–65 to +150

Note 110 m W m ust not be exceeded in 1 elem ent.

The inform ation in this docum ent is subject to change w ithout notice.

Document No. ID-3636

(O.D. No. ID-9143)

Date Published April 1995 P

Printed in Japan

1995

12 3 4 5 6

中文翻译

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