Datasheet > UPA1951TE-A

UPA1951TE-A

更新时间： 2024-02-18 12:32:52

品牌	Logo	应用领域
日电电子 - NEC		开关脉冲光电二极管晶体管
页数	文件大小	规格书
8页	73K
描述
Power Field-Effect Transistor, 2.5A I(D), 12V, 0.133ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-95, 6 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPA1951TE-A 技术参数

生命周期：	Transferred	零件包装代码：	SC-95
包装说明：	SMALL OUTLINE, R-PDSO-G6	针数：	6
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.21	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	12 V	最大漏极电流 (ID)：	2.5 A
最大漏源导通电阻：	0.133 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	最大脉冲漏极电流 (IDM)：	10 A
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

UPA1951TE-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA1951

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µ PA1951 is a switching device, which can be driven

directly by a 1.8 V power source.

The device features a low on-state resistance and excellent

switching characteristics, and is suitable for applications

such as power switch of portable machine and so on.

+0.1

–0.05

+0.1

0.32

0.16

–0.06

FEATURES

• 1.8 V drive available

• Low on-state resistance

0 to 0.1

R^DS(on)1= 88 mΩ MAX. (V^GS= −4.5V, I^D= −1.5 A)

R^DS(on)2= 114 mΩ MAX. (V^GS= −3.0 V, I^D= −1.5 A)

R^DS(on)3= 133 mΩ MAX. (V^GS= −2.5 V, I^D= −1.5 A)

R^DS(on)4= 234 mΩ MAX. (V^GS= −1.8 V, I^D= −1.0 A)

0.65

0.95 0.95

1.9

0.9 to 1.1

2.9 ±0.2

ORDERING INFORMATION

6: Drain 1

1: Gate 1

5: Source 1

: Drain 2

3: Gate 2

2: Source 2

PART NUMBER

PACKAGE

µ PA1951TE

SC-95 (Mini Mold Thin Type)

Marking: TN

EQUIVALENT CIRCUITS

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

V^DSS

−12

m8.0

m2.5

m10

Drain 1

Drain 2

Gate to Source Voltage (V^DS= 0 V)

V^GSS

Drain Current (DC)

I^D(DC)

I^D(pulse)

P^T1

Body

Drain Current (pulse) ^Note1

Total Power Dissipation (2 units) ^Note2

Total Power Dissipation (1 unit) ^Note2

Channel Temperature

Gate 1

Gate 2

Diode

Gate

1.15

0.57

150

°C

Protection

Diode

Protection

Diode

Source 1

Source 2

P^T2

T^ch

Storage Temperature

T^stg

−55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board of 5000 mm²x 1.1 mm, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. G15613EJ1V0DS00 (1st edition)

Date Published August 2002 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7 8

中文翻译

下载PDF

与UPA1951TE-A相关器件

型号	品牌	获取价格	描述	数据表
UPA1951TE-T1	RENESAS	获取价格	UPA1951TE-T1
UPA1951TE-T1-A	RENESAS	获取价格	Pch Dual Power Mosfet -12V -2.5A 88Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape
UPA1951TE-T2	RENESAS	获取价格	UPA1951TE-T2
UPA1951TE-T2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,2.5A I(D),TSOP
UPA1951TE-T2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,2.5A I(D),TSOP
UPA1952	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1952TE	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1952TE	RENESAS	获取价格	2000mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, THIN, MINIMOLD PACKAGE
UPA1952TE-A	NEC	获取价格	Power Field-Effect Transistor, 2A I(D), 20V, 0.284ohm, 2-Element, P-Channel, Silicon, Meta
UPA1952TE-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,2A I(D),TSOP

与UPA1951TE-A相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

31
AIC1781A 电池充电控制器深度解析
2024-09-03

19
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

61
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

67

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA1951TE-A

UPA1951TE-A 技术参数

UPA1951TE-A 数据手册

与UPA1951TE-A相关器件

与UPA1951TE-A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA1951TE-A

UPA1951TE-A 技术参数

UPA1951TE-A 数据手册

与UPA1951TE-A相关器件

与UPA1951TE-A相关文章

您还可以找

您在本页遇到什么问题？