是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-95 |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.21 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 12 V | 最大漏极电流 (Abs) (ID): | 2.5 A |
最大漏极电流 (ID): | 2.5 A | 最大漏源导通电阻: | 0.133 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e6 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1.15 W | 最大脉冲漏极电流 (IDM): | 10 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Bismuth (Sn98Bi2) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA1951TE-T1 | RENESAS |
获取价格 |
UPA1951TE-T1 |
![]() |
UPA1951TE-T1-A | RENESAS |
获取价格 |
Pch Dual Power Mosfet -12V -2.5A 88Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape |
![]() |
UPA1951TE-T2 | RENESAS |
获取价格 |
UPA1951TE-T2 |
![]() |
UPA1951TE-T2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,2.5A I(D),TSOP |
![]() |
UPA1951TE-T2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,2.5A I(D),TSOP |
![]() |
UPA1952 | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
![]() |
UPA1952TE | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
![]() |
UPA1952TE | RENESAS |
获取价格 |
2000mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, THIN, MINIMOLD PACKAGE |
![]() |
UPA1952TE-A | NEC |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 20V, 0.284ohm, 2-Element, P-Channel, Silicon, Meta |
![]() |
UPA1952TE-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,2A I(D),TSOP |
![]() |