5秒后页面跳转
捷配首页

Datasheet > UPA1950TE
UPA1950TE PDF预览

UPA1950TE

更新时间： 2024-02-10 10:46:27
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管场效应晶体管开关
页数 文件大小 规格书
8页 71K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

阅读下载

中文翻译

获取价格

UPA1950TE 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SC-95包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.37
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：12 V
最大漏极电流 (ID)：2.5 A最大漏源导通电阻：0.205 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G6
JESD-609代码：e0元件数量：2
端子数量：6工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：7 A
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UPA1950TE 数据手册

 浏览型号UPA1950TE的Datasheet PDF文件第2页浏览型号UPA1950TE的Datasheet PDF文件第3页浏览型号UPA1950TE的Datasheet PDF文件第4页浏览型号UPA1950TE的Datasheet PDF文件第5页浏览型号UPA1950TE的Datasheet PDF文件第6页浏览型号UPA1950TE的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µPA1950  
P-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The µPA1950 is a switching device which can be driven  
directly by a 1.8 V power source.  
+0.1  
–0.05  
+0.1  
–0.06  
0.32  
0.16  
This device features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such as  
power switch of portable machine and so on.  
6
1
5
2
4
3
0 to 0.1  
FEATURES  
• 1.8 V drive available  
• Low on-state resistance  
0.65  
RDS(on)1 = 130 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)  
RDS(on)2 = 176 mΩ MAX. (VGS = –3.0 V, ID = –1.5 A)  
RDS(on)3 = 205 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)  
RDS(on)4 = 375 mΩ MAX. (VGS = –1.8 V, ID = –1.0 A)  
0.95 0.95  
1.9  
0.9 to 1.1  
2.9 ±0.2  
6: Drain1  
1: Gate1  
5: Source1 2: Source2  
4: Drain2  
3: Gate2  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
Note  
µPA1950TE  
SC-95 (Mini Mold Thin Type)  
Note Marking: TM  
EQUIVALENT CIRCUIT  
Drain 1  
Drain 2  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TA = 25°C)  
Drain Current (pulse) Note1  
Total Power Dissipation (2unit) Note2  
Total Power Dissipation (1unit) Note2  
Channel Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
–12  
m8.0  
m2.5  
m7.0  
1.15  
0.57  
150  
V
V
A
Body  
Diode  
Body  
Diode  
Gate 1  
Gate  
Protection  
Diode  
Gate 2  
A
Gate  
Protection  
Diode  
W
W
°C  
Source 1  
Source 2  
PT2  
Tch  
Storage Temperature  
Tstg  
–55 to +150 °C  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Mounted on FR-4 board, t ≤ 5 sec.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated  
voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published January 2002 NS CP(K)  
Printed in Japan  
G15620EJ2V0DS00 (2nd edition)  
2001  
©
12345678

中文翻译

下载PDF

与UPA1950TE相关器件

型号 品牌 获取价格 描述 数据表
UPA1950TE-A RENESAS

获取价格

 		2.5A, 12V, 0.205ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-95, 6 PIN
UPA1951 NEC

获取价格

 		P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1951TE NEC

获取价格

 		P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1951TE-A RENESAS

获取价格

 		2.5A, 12V, 0.133ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-95, 6 PIN
UPA1951TE-A NEC

获取价格

 		Power Field-Effect Transistor, 2.5A I(D), 12V, 0.133ohm, 2-Element, P-Channel, Silicon, Me
UPA1951TE-T1 RENESAS

获取价格

 		UPA1951TE-T1
UPA1951TE-T1-A RENESAS

获取价格

 		Pch Dual Power Mosfet -12V -2.5A 88Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape
UPA1951TE-T2 RENESAS

获取价格

 		UPA1951TE-T2
UPA1951TE-T2-A RENESAS

获取价格

 		TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,2.5A I(D),TSOP
UPA1951TE-T2-AT RENESAS

获取价格

 		TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,2.5A I(D),TSOP

与UPA1950TE相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证