Datasheet > UPA1950

UPA1950

更新时间： 2024-02-18 00:50:27

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	71K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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UPA1950 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1950

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA1950 is a switching device which can be driven

directly by a 1.8 V power source.

+0.1

–0.05

+0.1

–0.06

0.32

0.16

This device features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such as

power switch of portable machine and so on.

0 to 0.1

FEATURES

• 1.8 V drive available

• Low on-state resistance

0.65

R^DS(on)1= 130 mΩ MAX. (V^GS= –4.5 V, I^D= –1.5 A)

R^DS(on)2= 176 mΩ MAX. (V^GS= –3.0 V, I^D= –1.5 A)

R^DS(on)3= 205 mΩ MAX. (V^GS= –2.5 V, I^D= –1.5 A)

R^DS(on)4= 375 mΩ MAX. (V^GS= –1.8 V, I^D= –1.0 A)

0.95 0.95

1.9

0.9 to 1.1

2.9 ±0.2

6: Drain1

1: Gate1

5: Source1 2: Source2

4: Drain2

3: Gate2

ORDERING INFORMATION

PART NUMBER

PACKAGE

Note

µPA1950TE

SC-95 (Mini Mold Thin Type)

Note Marking: TM

EQUIVALENT CIRCUIT

Drain 1

Drain 2

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

Total Power Dissipation (2unit) ^Note2

Total Power Dissipation (1unit) ^Note2

Channel Temperature

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

–12

m8.0

m2.5

m7.0

1.15

0.57

150

Body

Diode

Body

Diode

Gate 1

Gate

Protection

Diode

Gate 2

Gate

Protection

Diode

°C

Source 1

Source 2

P^T2

Tch

Storage Temperature

Tstg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published January 2002 NS CP(K)

Printed in Japan

G15620EJ2V0DS00 (2nd edition)

2001

12 3 4 5 6 7 8

中文翻译

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与UPA1950相关器件

型号	品牌	获取价格	描述	数据表
UPA1950TE	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1950TE-A	RENESAS	获取价格	2.5A, 12V, 0.205ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-95, 6 PIN
UPA1951	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1951TE	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1951TE-A	RENESAS	获取价格	2.5A, 12V, 0.133ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-95, 6 PIN
UPA1951TE-A	NEC	获取价格	Power Field-Effect Transistor, 2.5A I(D), 12V, 0.133ohm, 2-Element, P-Channel, Silicon, Me
UPA1951TE-T1	RENESAS	获取价格	UPA1951TE-T1
UPA1951TE-T1-A	RENESAS	获取价格	Pch Dual Power Mosfet -12V -2.5A 88Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape
UPA1951TE-T2	RENESAS	获取价格	UPA1951TE-T2
UPA1951TE-T2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,2.5A I(D),TSOP

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