Datasheet > UPA1931

UPA1931

更新时间： 2024-02-01 18:24:21

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	123K
描述
MOS FIELD EFFECT TRANSISTOR

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UPA1931 数据手册

Preliminary Data Sheet

PA1931

MOS FIELD EFFECT TRANSISTOR

R07DS0009EJ0103

Rev.1.03

May 09, 2012

Description

The PA1931 is a switching device, which can be driven directly by a 4.5 V power source.

The PA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications

such as power switch of portable machine and so on.

Features



4.5 V drive available

Low on-state resistance

 R_DS(on)1= 65 m MAX. (V_GS= −10 V, I_D= −1.8 A)

 R_DS(on)2= 100 m MAX. (V_GS= −4.5 V, I_D= −1.8 A)

Ordering Information

Part No.

Lead Plating

Pure Sn (Tin)

Packing

Package

PA1931TE-T1-AT ^*

Tape 3000 p/reel

SC-95 (Mini Mold Thin Type)

typ. 0.011 g

PA1931TE-T2-AT ^*

Note: *1 This product does not contain Pb.

"-T1" and "-T2" in Part No. indicate the unit orientation.

Marking: UB

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

V_GSS

I_D(DC)

I_D(pulse)

P_T1

Ratings

−40

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_A= 25°C)

4.5



Drain Current (pulse) ^*



Total Power Dissipation

Total Power Dissipation ^*

0.2

°C

P_T2

2.0

Channel Temperature

Storage Temperature

Single Avalanche Current ^*

T_ch

150

T_stg

−55 to +150

I_AS

3.5

1.2

Single Avalanche Energy ^*

E_AS

Notes: *1 P_W 10 s, Duty Cycle  1%

*2 Mounted on FR-4 board of 50 mm  50 mm  1.6 mmt, t  5 sec

*3 T_ch(peak) 150°C, R_G= 25 

R07DS0009EJ0103 Rev.1.03

May 09, 2012

Page 1 of 6

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