是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.34 |
Is Samacsys: | N | 其他特性: | ESD PROTECTED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 4.5 A | 最大漏极电流 (ID): | 4.5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 2 W | 最大脉冲漏极电流 (IDM): | 18 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA1930TE-T2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,4.5A I(D),TSOP |
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UPA1931 | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR |
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UPA1931TE-T1-AT | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR |
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UPA1931TE-T2-AT | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR |
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UPA1950 | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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UPA1950TE | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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UPA1950TE-A | RENESAS |
获取价格 |
2.5A, 12V, 0.205ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-95, 6 PIN |
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UPA1951 | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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UPA1951TE | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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UPA1951TE-A | RENESAS |
获取价格 |
2.5A, 12V, 0.133ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-95, 6 PIN |
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