是否Rohs认证: | 符合 | 生命周期: | Transferred |
Reach Compliance Code: | compliant | 风险等级: | 5.72 |
其他特性: | ESD PROTECTED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 4.5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 18 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA1930TE-T2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,4.5A I(D),TSOP | |
UPA1931 | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA1931TE-T1-AT | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA1931TE-T2-AT | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA1950 | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1950TE | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1950TE-A | RENESAS |
获取价格 |
2.5A, 12V, 0.205ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-95, 6 PIN | |
UPA1951 | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1951TE | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1951TE-A | RENESAS |
获取价格 |
2.5A, 12V, 0.133ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-95, 6 PIN |