Datasheet > UPA1930TE-T1-A

UPA1930TE-T1-A

更新时间： 2024-10-04 07:23:39

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	100K
描述
Power Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UPA1930TE-T1-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA1930

P-CHANNEL MOSFET

FOR SWITCHING

DESCRIPTION

The μPA1930 is a P-channel MOSFET designed for power

PACKAGE DRAWING (Unit : mm)

–0.05

+0.1

0.32

0.16

–0.06

switch of portable machine and so on.

FEATURES

−4.5 V drive available

RDS(on)1 = 77 mΩ MAX. (VGS = −10 V, ID = −2.5 A)

R^DS(on)2= 100 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)

0 to 0.1

ORDERING INFORMATION

0.65

0.95 0.95

1.9

PART NUMBER

μPA1930TE-T1-A

μPA1930TE-T2-A

PACKAGE

0.9 to 1.1

SC-95 (Mini Mold Thin Type)

2.9 0.2

Remark "-A" indicates Pb-free (This product does not contain

Pb in external electrode and other parts).

"-T1", "-T2" indicates the unit orientation (8 mm embossed

carrier tape, 3,000 pcs/reel).

, 2, 5, 6 : Drain

: Gate

: Source

Marking : UA

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain

Drain to Source Voltage (VGS = 0V)

Gate to Source Voltage (V^DS= 0V)

Drain Current (DC) ^Note1

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

−30

m20

Body

m4.5

Diode

Gate

Drain Current (pulse) ^Note2

m18

Total Power Dissipation

0.2

°C

Gate

Total Power Dissipation ^Note1

Channel Temperature

P^T2

2.0

Source

Protection

Diode

T^ch

150

Storage Temperature

T^stg

−55 to +150

Notes 1. Mounted on FR-4 Board 2500 mm²× 1.6 mm, t ≤ 5 sec

2. PW ≤ 10 μs, Duty Cycle ≤ 1%

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for

electrostatic discharge. V^ESD± 150 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G18030EJ1V0DS00 (1st edition)

Date Published April 2006 NS CP(K)

Printed in Japan

2006

12 3 4 5 6

中文翻译

下载PDF

与UPA1930TE-T1-A相关器件

型号	品牌	获取价格	描述	数据表
UPA1930TE-T2-A	NEC	获取价格	Power Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide
UPA1930TE-T2-A	RENESAS	获取价格	4.5A, 30V, P-CHANNEL, Si, POWER, MOSFET
UPA1930TE-T2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,4.5A I(D),TSOP
UPA1931	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA1931TE-T1-AT	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA1931TE-T2-AT	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA1950	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1950TE	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1950TE-A	RENESAS	获取价格	2.5A, 12V, 0.205ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-95, 6 PIN
UPA1951	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

与UPA1930TE-T1-A相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

33
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

30
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

42

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA1930TE-T1-A

UPA1930TE-T1-A 数据手册

与UPA1930TE-T1-A相关器件

与UPA1930TE-T1-A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA1930TE-T1-A

UPA1930TE-T1-A 数据手册

与UPA1930TE-T1-A相关器件

与UPA1930TE-T1-A相关文章

您还可以找

您在本页遇到什么问题？