Datasheet > UNRL213

UNRL213

更新时间： 2024-11-25 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	131K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

获取价格

数据手册

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UNRL213 数据手册

Transistors with built-in Resistor

UNRL210/211/213/214/215/216

Silicon NPN epitaxial planer type

Unit: mm

For digital circuit

0.020 0.010

I Features

Mold leadless type package, allowing downsizing and thinning of

the equipment and automatic insertion through the tape packing.

The PCB mounting area is 1/10 of that of lead type package (3-pin

MINI-type package).

•

0.60 0.0ꢀ

1.00 0.0ꢀ

•

I Resistance by Part Number

0.30 0.03

0.0ꢀ 0.03

Marking Symbol (R₁)

(R₂)



10 kΩ

47 kΩ



0.60

• UNRL210

• UNRL211

• UNRL213

• UNRL214

• UNRL215

• UNRL216

47 kΩ

10 kΩ

47 kΩ

10 kΩ

4.7 kΩ

1: Base

2: Emitter

3: Collector

4: Collector

ML4-N1 Package



I Absolute Maximum Ratings T_a= 25°C

Internal Connection

Parameter

Collector to base voltage

Collector to emitter voltage

Collector current

Symbol

V_CBO

V_CEO

I_C

Rating

Unit

R₂

R₁

100

°C

Total power dissipation ^*

Junction temperature

Storage temperature

P_T

150

T_j

125

T_stg

−55 to +125

°C

Note) : Printed circuit board copper foil for collector portion

area: 20.0 mm²or more, thickness: 1.6 mm

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

0.1

Unit

Collector cutoff current

V_CB= 50 V, I_E= 0

V_CE= 50 V, I_B= 0

V_EB= 6 V, I_C= 0

µA

I_CEO

0.5

Emitter cutoff UNRL211

I_EBO

0.5

current

UNRL214

0.2

UNRL213

0.1

UNRL210/215/216

0.01

Collector to base voltage

V_CBO

V_CEO

h_FE

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

Collector to emitter voltage

Forward current UNRL211

transfer ratio

V_CE= 10 V, I_C= 5 mA

UNRL213/214

UNRL210/215/216

160

460

Collector to emitter saturation voltage

V_CE(sat)

I_C= 10 mA, I_B= 0.3 mA

0.25

Publication date: July 2001

SJH00045AED

12 3 4 5 6 7

中文翻译

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