Datasheet > UNR921EJ|UN921EJ

UNR921EJ|UN921EJ

更新时间： 2024-11-27 23:39:35

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管
页数	文件大小	规格书
19页	397K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

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UNR921EJ|UN921EJ 数据手册

Transistors with built-in Resistor

UNR921xJ Series (UN921xJ Series)

Silicon NPN epitaxial planar type

Unit: mm

+0.05

For digital circuits

1.60

–0.03

+0.03

0.12

–0.01

1.00 0.05

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

• SS-Mini type package, allowing automatic insertion through tape

packing.

0.27 0.02

(0.50)(0.50)

■ Resistance by Part Number

5˚

Marking Symbol (R₁)

(R₂)



• UNR9210J (UN9210J) 8L

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

• UNR9211J (UN9211J) 8A

• UNR9212J (UN9212J) 8B

• UNR9213J (UN9213J) 8C

• UNR9214J (UN9214J) 8D

• UNR9215J (UN9215J) 8E

• UNR9216J (UN9216J) 8F

• UNR9217J (UN9217J) 8H

• UNR9218J (UN9218J) 8I

• UNR9219J (UN9219J) 8K

10 kΩ

22 kΩ

47 kΩ



5.1 kΩ

10 kΩ

100 kΩ



47 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

2.2 kΩ

1: Base

2: Emitter

3: Collector

EIAJ: SC-89

SSMini3-F1 Package

Internal Connection

R₁

• UNR921AJ

• UNR921BJ

• UNR921CJ

100 kΩ



R₂

• UNR921DJ (UN921DJ) 8M

• UNR921EJ (UN921EJ) 8N

• UNR921FJ (UN921FJ) 8O

• UNR921KJ (UN921KJ) 8P

• UNR921LJ (UN921LJ) 8Q

47 kΩ

4.7 kΩ

10 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

22 kΩ

2.2 kΩ

• UNR921MJ

• UNR921NJ

• UNR921TJ (UN921TJ) EZ

• UNR921VJ FD

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Collector current

I_C

P_T

100

°C

125

Total power dissipation

Junction temperature

Storage temperature

T_j

125

T_stg

−55 to +125

°C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: January 2004

SJH00039BED

12 3 4 5 6 7...19

中文翻译

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与UNR921EJ|UN921EJ相关器件

型号	品牌	获取价格	描述	数据表
UNR921F	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SS-MINI
UNR921FG	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
UNR921FJ	PANASONIC	获取价格	Silicon NPN epitaxial planar type
UNR921K	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SS-MINI
UNR921KG	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
UNR921KJ	PANASONIC	获取价格	Silicon NPN epitaxial planar type
UNR921KJ(UN921KJ)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR921KJ\|UN921KJ	PANASONIC	获取价格	Composite Device - Transistors with built-in Resistor
UNR921L	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SS-MINI
UNR921LG	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO

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