5秒后页面跳转
UNR9218J(UN9218J) PDF预览

UNR9218J(UN9218J)

更新时间: 2024-11-27 23:39:35
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
18页 307K
描述
Composite Device - Transistors with built-in Resistor

UNR9218J(UN9218J) 数据手册

 浏览型号UNR9218J(UN9218J)的Datasheet PDF文件第2页浏览型号UNR9218J(UN9218J)的Datasheet PDF文件第3页浏览型号UNR9218J(UN9218J)的Datasheet PDF文件第4页浏览型号UNR9218J(UN9218J)的Datasheet PDF文件第5页浏览型号UNR9218J(UN9218J)的Datasheet PDF文件第6页浏览型号UNR9218J(UN9218J)的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR92XXJ Series (UN92XXJ Series)  
Silicon NPN epitaxial planer type  
Unit: mm  
+0.0ꢀ  
1.60  
–0.03  
+0.03  
For digital circuit  
0.12  
–0.01  
1.00 0.0ꢀ  
3
I Features  
Costs can be reduced through downsizing of the equipment and  
1
2
reduction of the number of parts.  
SS-mini type package, allowing automatic insertion through tape  
packing.  
0.27 0.02  
(0.ꢀ0)(0.ꢀ0)  
I Resistance by Part Number  
°  
Marking symbol (R1)  
(R2)  
UNR9210J (UN9210J) 8L  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
UNR9211J (UN9211J) 8A  
UNR9212J (UN9212J) 8B  
UNR9213J (UN9213J) 8C  
UNR9214J (UN9214J) 8D  
UNR9215J (UN9215J) 8E  
UNR9216J (UN9216J) 8F  
UNR9217J (UN9217J) 8H  
UNR9218J (UN9218J) 8I  
UNR9219J (UN9219J) 8K  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
5.1 kΩ  
10 kΩ  
100 kΩ  
47 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-89  
SSMini3-F1 Package  
Internal Connection  
R1  
UNR921AJ  
UNR921BJ  
UNR921CJ  
8X  
8Y  
8Z  
100 kΩ  
100 kΩ  
C
E
B
R2  
UNR921DJ (UN921DJ) 8M  
UNR921EJ (UN921EJ) 8N  
UNR921FJ (UN921FJ) 8O  
UNR921KJ (UN921KJ) 8P  
UNR921LJ (UN921LJ) 8Q  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
UNR921MJ  
UNR921NJ  
EL  
EX  
UNR921TJ (UN921TJ) EZ  
UNR921VJ FD  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
Unit  
V
50  
50  
V
100  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
125  
Tj  
125  
Tstg  
55 to +125  
°C  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: July 2001  
SJH00039AED  
1

与UNR9218J(UN9218J)相关器件

型号 品牌 获取价格 描述 数据表
UNR9218J|UN9218J PANASONIC

获取价格

Composite Device - Transistors with built-in Resistor
UNR9219 ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
UNR9219G PANASONIC

获取价格

暂无描述
UNR9219J PANASONIC

获取价格

Silicon NPN epitaxial planar type
UNR9219J(UN9219J) ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNR9219J|UN9219J PANASONIC

获取价格

Composite Device - Transistors with built-in Resistor
UNR921AG PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
UNR921AJ PANASONIC

获取价格

Silicon NPN epitaxial planer transistor
UNR921BJ PANASONIC

获取价格

Silicon NPN epitaxial planer transistor
UNR921CG PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO