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UNR52A8G PDF预览

UNR52A8G

更新时间： 2024-10-30 21:18:39
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 682K
描述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

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UNR52A8G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-F3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.83
其他特性：BUILT IN BAIS RESISTOR RATIO IS 10最大集电极电流 (IC)：0.08 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：20JESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：150 MHzBase Number Matches：1

UNR52A8G 数据手册

 浏览型号UNR52A8G的Datasheet PDF文件第2页浏览型号UNR52A8G的Datasheet PDF文件第3页浏览型号UNR52A8G的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors with built-in Resistor  
UNR52A8G  
Silicon NPN epitaxial planar type  
For digital circuits  
Features  
Package  
Costs can be reduced through downsizing of the equipment and reduction of  
the number of parts.  
ꢀCode  
SMini3-F2  
ꢀPin Name  
1: Base  
SMini type package allowing easy automatic insertion through tape packing  
2: mitter  
ctor  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
I
Ratin
Unit  
V
Marking Symbol: HF  
Internal Connection  
50  
V
mA  
mW  
°C  
R1 (0.51 kΩ)  
Total power dissipation  
PT  
150  
C
E
B
Junction temperature  
Tj  
150  
R2  
(5.1 kΩ)  
Storage temperature  
T
g  
–55 to +150  
°C  
ElectricaCharacteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
V
Collector-base ver opn)  
Collector-emitter vopen)  
Collector-base cutoff cu(Emitter open
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high-level  
VCBO IC = 10 mA, IE = 0  
VCEO IC = 2 mA, IB = 0  
50  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
2.0  
mA  
mA  
mA  
VCE = 10 V, IC = 5 mA  
20  
V
VCE(sat) IC = 10 mA, IB = 0.3 mA  
0.25  
0.2  
VOH  
VOL  
R1  
VCC = 5 V, VB = 0.5 V, RL = 1 kW  
4.9  
V
Output voltage low-level  
VCC = 5 V, VB = 2.5 V, RL = 1 kW  
V
Input resistance  
–30%  
0.08  
0.51  
0.10  
150  
+30%  
0.12  
kW  
Resistance ratio  
R1 / R2  
fT  
Transition frequency  
VCB = 10 V, IE = –2 mA, f = 200 MHz  
MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: August 2008  
SJH00289AED  
1
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