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UNR521Z|UN521Z PDF预览

UNR521Z|UN521Z

更新时间: 2024-02-24 09:42:30
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
17页 435K
描述
Composite Device - Transistors with built-in Resistor

UNR521Z|UN521Z 数据手册

 浏览型号UNR521Z|UN521Z的Datasheet PDF文件第2页浏览型号UNR521Z|UN521Z的Datasheet PDF文件第3页浏览型号UNR521Z|UN521Z的Datasheet PDF文件第4页浏览型号UNR521Z|UN521Z的Datasheet PDF文件第5页浏览型号UNR521Z|UN521Z的Datasheet PDF文件第6页浏览型号UNR521Z|UN521Z的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR521x Series (UN521x Series)  
Silicon NPN epitaxial planar type  
Unit: mm  
+0.10  
–0.05  
+0.1  
For digital circuits  
0.15  
0.3  
–0.0  
3
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
1
2
S-Mini type package, allowing automatic insertion through the tape  
packing and magazine packing  
(0.65) (0.65)  
1.3 0.1  
2.0 0.2  
Resistance by Part Number  
10˚  
Marking symbol (R1)  
(R2)  
UNR5210 (UN5210)  
UNR5211 (UN5211)  
UNR5212 (UN5212)  
UNR5213 (UN5213)  
UNR5214 (UN5214)  
UNR5215 (UN5215)  
UNR5216 (UN5216)  
UNR5217 (UN5117)  
UNR5218 (UN5218)  
UNR5219 (UN5219)  
UNR521D (UN521D)  
UNR521E (UN521E)  
UNR521F (UN521F)  
UNR521K (UN521K)  
UNR521L (UN521L)  
8L  
8A  
8B  
8C  
8D  
8E  
8F  
8H  
8I  
8K  
8M  
8N  
8O  
8P  
8Q  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-70  
SMini3-G1 Package  
Internal Connection  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
22 kΩ  
R1  
B
C
E
R2  
UNR521M (UN521M) EL  
UNR521N (UN521N)  
UNR521T (UN521T)  
UNR521V (UN521V)  
UNR521Z (UN521Z)  
EX  
EZ  
FD  
FF  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
Tj  
100  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
150  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: January 2004  
SJH00024CED  
1

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