Datasheet > UNR5211G0L

UNR5211G0L

更新时间： 2025-09-22 19:15:03

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
18页	627K
描述
元器件封装:S迷你型3-F2;

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中文翻译

获取价格

数据手册

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UNR5211G0L 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors with built-in Resistor

UNR521xG Series

Silicon NPN epitaxial planar type

For digital circuits

■ Features

■ Package

•

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

Code

SMini3-F2

•

• S-Mini type package, allowing automatic insertion through the tape

packing and magazine packing

Pin Name

1: Base

2: Emitter

3: Collector

■ Resistance by Part Number

Marking symbol (R₁)

(R₂)



■ Internal Connection

• UNR5210G

• UNR5211G

• UNR5212G

• UNR5213G

• UNR5214G

• UNR5215G

• UNR5216G

• UNR5217G

• UNR5218G

• UNR5219G

• UNR521DG

• UNR521EG

• UNR521FG

• UNR521KG

• UNR521LG

• UNR521MG

• UNR521NG

• UNR521TG

• UNR521VG

• UNR521ZG

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

47 kΩ

4.7 kΩ

10 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

22 kΩ

2.2 kΩ

4.7 kΩ

10 kΩ

22 kΩ

47 kΩ



R₁

R₂



5.1 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

2.2 kΩ

22 kΩ

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Collector current

I_C

P_T

T_j

100

°C

Total power dissipation

Junction temperature

Storage temperature

150

T_stg

−55 to +150

°C

Publication date: June 2007

SJH00218AED

12 3 4 5 6 7...18

中文翻译

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