Datasheet > UNM2N

UNM2N

更新时间： 2024-04-09 19:01:44

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	484K
描述
50V,100mA,NPN Bipolar Digital Transistor 50V,100mA,PNP Bipolar Digital Transistor

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UNM2N 数据手册

Digital Transistor

UNM2N

Features



Simplifies circuit design

Reduces board space

Reduces component count

R₁= 22kΩ, R₂= 47kΩ

Mechanical Data



Case: SOT-363

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-363

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

UNM2N

SOT-363

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Value

Parameter

Symbol

Unit

-50

-100

-40

-7

100

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Current (Continuous)

Input Forward Voltage

V_CBO

V_CEO

I_C

V_IN(fwd)

V_IN(rev)

Input Reverse Voltage

Thermal Characteristics

Parameter

Power Dissipation(T_A= 25°C ) ^*1

Symbol

Value

250

Unit

°C /W

°C

P_D

R_θJA

R_θJL

T_J

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Lead ^*1

Operating Junction Temperature Range

Storage Temperature Range

493

188

-55 ~ +150

T_STG

°C

Notes:

1、 FR 4 @ Minimum Pad.

2、 Pulsed Condition: Pulse Width = 300 ms, Duty Cycle 2%

DTM0067A: December 2021

www.gmesemi.com

12 3 4 5

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