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UN911LTX

更新时间: 2024-11-26 13:15:11
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
14页 190K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

UN911LTX 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):20
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UN911LTX 数据手册

 浏览型号UN911LTX的Datasheet PDF文件第2页浏览型号UN911LTX的Datasheet PDF文件第3页浏览型号UN911LTX的Datasheet PDF文件第4页浏览型号UN911LTX的Datasheet PDF文件第5页浏览型号UN911LTX的Datasheet PDF文件第6页浏览型号UN911LTX的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/  
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ  
Silicon PNP epitaxial planer transistor  
Unit: mm  
For digital circuits  
1.6±0.15  
0.8±0.1  
0.4  
0.4  
Features  
1
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
3
SS-Mini type package, allowing automatic insertion through tape  
2
packing and magazine packing.  
Resistance by Part Number  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
0.2±0.1  
UN9111  
UN9112  
UN9113  
UN9114  
UN9115  
UN9116  
UN9117  
UN9118  
UN9119  
UN9110  
UN911D  
UN911E  
UN911F  
UN911H  
UN911L  
UNR911AJ  
UNR911BJ  
UNR911CJ  
6A  
6B  
6C  
6D  
6E  
6F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
100kΩ  
100kΩ  
1 : Base  
2 : Emitter  
3 : Collector  
SS–Mini Type Pakage  
Unit: mm  
6H  
6I  
1.60±0.05  
0.80 0.80±0.05  
0.425 0.425  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
100kΩ  
6K  
6L  
6M  
6N  
6O  
6P  
6Q  
6X  
6Y  
6Z  
0.85+–0.053  
47kΩ  
1 : Base  
2 : Emitter  
3 : Collector  
SS–Mini Flat Type Pakage (J type)  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Internal Connection  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
125  
C
E
Tj  
125  
R1  
B
Tstg  
–55 to +125  
˚C  
R2  
1

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