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UN9110 PDF预览

UN9110

更新时间: 2024-09-23 22:17:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
14页 190K
描述
Silicon PNP epitaxial planer transistor

UN9110 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):160
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):0.125 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

UN9110 数据手册

 浏览型号UN9110的Datasheet PDF文件第2页浏览型号UN9110的Datasheet PDF文件第3页浏览型号UN9110的Datasheet PDF文件第4页浏览型号UN9110的Datasheet PDF文件第5页浏览型号UN9110的Datasheet PDF文件第6页浏览型号UN9110的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/  
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ  
Silicon PNP epitaxial planer transistor  
Unit: mm  
For digital circuits  
1.6±0.15  
0.8±0.1  
0.4  
0.4  
Features  
1
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
3
SS-Mini type package, allowing automatic insertion through tape  
2
packing and magazine packing.  
Resistance by Part Number  
Marking Symbol (R1)  
(R2)  
10k  
22kΩ  
47kΩ  
47kΩ  
0.2±0.1  
UN9111  
UN9112  
UN9113  
UN9114  
UN9115  
UN9116  
UN9117  
UN9118  
UN9119  
UN9110  
UN911D  
UN911E  
UN911F  
UN911H  
UN911L  
UNR911AJ  
UNR911BJ  
UNR911CJ  
6A  
6B  
6C  
6D  
6E  
6F  
10kΩ  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
100kΩ  
100kΩ  
1 : Base  
2 : Emitter  
3 : Collector  
SS–Mini Type Pakage  
Unit: mm  
6H  
6I  
1.60±0.05  
0.80 0.80±0.05  
0.425 0.425  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
100kΩ  
6K  
6L  
6M  
6N  
6O  
6P  
6Q  
6X  
6Y  
6Z  
0.85+–0.053  
47kΩ  
1 : Base  
2 : Emitter  
3 : Collector  
SS–Mini Flat Type Pakage (J type)  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Internal Connection  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
125  
C
E
Tj  
125  
R1  
B
Tstg  
–55 to +125  
˚C  
R2  
1

UN9110 替代型号

型号 品牌 替代类型 描述 数据表
UN9110J PANASONIC

完全替代

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO

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Silicon PNP epitaxial planer transistor
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Silicon PNP epitaxial planer transistor