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UN6122

更新时间: 2024-11-27 22:17:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
6页 84K
描述
Silicon PNP epitaxial planer transistor

UN6122 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):50
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP最大功率耗散 (Abs):0.6 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

UN6122 数据手册

 浏览型号UN6122的Datasheet PDF文件第2页浏览型号UN6122的Datasheet PDF文件第3页浏览型号UN6122的Datasheet PDF文件第4页浏览型号UN6122的Datasheet PDF文件第5页浏览型号UN6122的Datasheet PDF文件第6页 
Transistors with built-in Resistor  
UN6121/6122/6123/6124/612X/612Y  
Silicon PNP epitaxial planer transistor  
For digital circuits  
Unit: mm  
6.9±0.1  
4.0  
2.5±0.1  
1.05  
±0.05  
Features  
(1.45)  
0.8  
0.7  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
MT-1 type package, allowing supply with the radial taping.  
0.65 max.  
Resistance by Part Number  
(R1)  
2.2k  
4.7KΩ  
10kΩ  
(R2)  
2.2kΩ  
4.7kΩ  
10kΩ  
10kΩ  
5kΩ  
0.45+00..015  
UN6121  
UN6122  
UN6123  
UN6124  
UN612X  
UN612Y  
2.5±0.5 2.5±0.5  
1
2
3
2.2kΩ  
0.27kΩ  
3.1kΩ  
1 : Emitter  
2 : Collector  
3 : Base  
4.6kΩ  
MT-1 Type Pakage  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Internal Connection  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
C
E
R1  
B
–500  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
600  
R2  
Tj  
150  
Tstg  
–55 to +150  
˚C  
1

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