Datasheet > UMZ1N

UMZ1N

更新时间： 2024-09-17 17:00:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	341K
描述
5V,0.15A,General Purpose NPN+PNP Bipolar Transistor

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中文翻译

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数据手册

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UMZ1N 数据手册

NPN/PNP General Purpose Transistor

UMZ1N

Features



Epitaxial planar die construction

Two internal isolated NPN/PNP transistors in one package

Ultra-small surface mount package

Mechanical Data



Case: SOT-363

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-363

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

UMZ1N

SOT-363

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

NPN

PNP

-60

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-6

Collector Current (Continuous)

150

-150

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

150

Unit

°C/W

°C

Thermal Resistance Junction-to-Air

Operating Junction Temperature

Storage Temperature Range

R_θJA

T_J

833

-55 ~ +150

T_STG

°C

STM0347A: December 2023 [2.0]

www.gmesemi.com

12 3 4 5

中文翻译

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