Datasheet > UMT1N

UMT1N

更新时间： 2024-10-15 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	251K
描述
50V,0.15A,General Purpose PNP Bipolar Transistor

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UMT1N 数据手册

Product specification

General Purpose Transistor

UMT1N

FEATURES

Lead-free



Two 2SA1037AK chips in a SOT-363

package.

Mounting possible with SOT-363 automatic

machines.

Transistor elements are independent, eliminating

Interference.

APPLICATIONS



Dual NPN small signal surface mount transistor.

SOT-363

ORDERING INFORMATION

Type No.

Marking

Package Code

SOT-363

UMT1N□

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-60

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Power Dissipation

-50

-6

-150

℃

P_D

150

T_j,T_stg

Junction and Storage Temperature

-55 to +150

STM0287A

www.gmesemi.com

12 3 4

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