Datasheet > UMN1N

UMN1N

更新时间： 2024-09-14 14:53:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		光电二极管
页数	文件大小	规格书
4页	1867K
描述
SOT-353

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中文翻译

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数据手册

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UMN1N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-353 Plastic-Encapsulate Diodes

UMN1N

SWITCHING DIODE

SOT-353

FEATURES



Multiple Diodes in One Small Surface Mount Package

Diode Characteristics are Matched in the Package

APPLICATIONS

High Speed Switching



MARKING: N1

Soliddot = Green molding compound device.

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Symbol

Parameter

Value

Unit

Continuous Reverse Voltage

V_R

Continuous Forward Current

I_O

Peak Forward Current

I_FM

I_FSM

Non-repetitive Peak Forward Surge Current@t= 8.3ms

Power Dissipation

0.25

150

℃/W

℃

P_D

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

833

R_θJA

T_J,T_stg

-55~+150

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)

I_R=100μA

V_R=70V

I_F=5mA

Reverse voltage

I_R

0.1

μA

Reverse current

V_F

C_tot

t_rr

0.9

3.5

Forward voltage

Total capacitance

V_R=6V,f=1MHz

I_F= I_R=5mA, V_R=6V, R_L=50Ω

Reverse recovery time

www.jscj-elec.com

Rev. - 2.1

12 3 4

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