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UML10

更新时间: 2024-11-22 22:17:27
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器
页数 文件大小 规格书
1页 20K
描述
NPN SILICON RF POWER TRANSISTOR

UML10 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-XRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.09Is Samacsys:N
最大集电极电流 (IC):1.1 A基于收集器的最大容量:15 pF
集电极-发射极最大电压:33 V配置:SINGLE
最小直流电流增益 (hFE):25最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-XRPM-F4元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):27 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

UML10 数据手册

  
UML10  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .280 4L STUD  
The UML10 is Designed for  
A
45°  
FEATURES:  
B
·
·
C
· Omnigold™ Metalization System  
D
J
E
I
F
MAXIMUM RATINGS  
G
H
K
1.1 A  
60 V  
IC  
#8-32 UNC  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
1.010 / 25.65  
.220 / 5.59  
.270 / 6.86  
.003 / 0.08  
.117 / 2.97  
1.055 / 26.80  
.230 /5.84  
A
B
C
D
E
F
G
H
I
33 V  
.285 / 7.24  
.007 / 0.18  
.137 / 3.48  
4.0 V  
.572 / 14.53  
.130 / 3.30  
27 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
8.0 OC/W  
.245 / 6.22  
.255 / 6.48  
.640 / 16.26  
.175 / 4.45  
.275 / 6.99  
.217 / 5.51  
.285 / 7.24  
J
K
TSTG  
qJC  
ORDER CODE: ASI10694  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVEBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IE = 20 mA  
IC = 20 mA  
VCB = 30 V  
VCE = 5.0 V  
4.0  
V
BVCES  
ICBO  
33  
V
1.0  
80  
mA  
---  
hFE  
IC = 0.5 A  
25  
10  
COB  
VCB = 28 V  
VCC = 28 V  
f = 860 MHz  
f = 400 MHz  
15  
pF  
PG  
dB  
%
POUT = 10 W  
hD  
60  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

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