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UMIL20 PDF预览

UMIL20

更新时间: 2024-01-07 04:12:30
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器
页数 文件大小 规格书
1页 25K
描述
NPN SILICON RF POWER TRANSISTOR

UMIL20 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknown风险等级:5.65
最大集电极电流 (IC):2.5 A基于收集器的最大容量:20 pF
配置:Single最小直流电流增益 (hFE):20
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
端子数量:4最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

UMIL20 数据手册

  
UMIL20  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI UMIL20 is a Common Emitter  
Device Designed for Class A , AB and  
C Amplifier Applications in the 225 to  
400 MHz Military Communications  
Band.  
PACKAGE STYLE .280 4L STUD  
FEATURES:  
· Direct Replacement for MRF323  
· PG = 12 dB Typical at 400 MHz  
· Omnigold™ Metalization System  
MAXIMUM RATINGS  
IC  
2.5 A  
VCBO  
PDISS  
TJ  
65 V  
35 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
5.0 OC/W  
1 = Collector  
2 = Base  
3 & 4 = Emitter  
TSTG  
qJC  
ORDER CODE: ASI10494  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
BVCER  
BVEBO  
ICBO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 20 mA  
IC = 20 mA  
IE = 20 mA  
VCB = 30 V  
VCE = 5 V  
65  
V
RBE = 200 W  
IC = 1.0 A  
33  
V
3.5  
V
2.0  
mA  
---  
hFE  
20  
200  
COB  
PG  
VCB = 28 V  
VCE = 28 V  
f = 1.0 MHz  
f = 400 MHz  
20  
pF  
10  
50  
12  
dB  
%
POUT = 20 W  
h
c
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without notice.  

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