Datasheet > UMH4N

UMH4N

更新时间： 2023-12-06 20:11:04

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	630K
描述
SOT-363

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数据手册

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UMH4N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

UMH4N

Dual Digital Transistors (NPN+NPN)

SOT-363

FEATURES

Two DTC114T chips in a package

Mounting possible with SOT-363 automatic mounting machines

Transistor elements are independent, eliminating interference

Mounting cost and area be cut in half

Marking: H4

Absolute maximum ratings (Ta=25℃)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Limits

Units

Collector Current -Continuous

Collector Dissipation

100

150

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=50μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=50μA,I_C=0

I_CBO

I_EBO

V_CB=50V,I_E=0

V_EB=4V,I_C=0

0.5

600

0.3

Emitter cut-off current

DC current gain

h_FE

V_CE=5V,I_C=1mA

I_C=10mA,I_B=1mA

100

300

Collector-emitter saturation voltage

V_CE(sat)

V_CE=10V,I_E=-5mA,

f=100MHz

Transition frequency

Imput resistor

f_T

250

MHz

kΩ

R₁

www.jscj-elec.com

Rev. - 2.0

12 3 4

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