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UMH1N-TP PDF预览

UMH1N-TP

更新时间: 2024-01-22 12:36:56
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
3页 185K
描述
Digital Transistors

UMH1N-TP 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.73
其他特性:DIGITAL, BUILT IN BIAS RESISTOR最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):56JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UMH1N-TP 数据手册

 浏览型号UMH1N-TP的Datasheet PDF文件第2页浏览型号UMH1N-TP的Datasheet PDF文件第3页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
UMH1N  
Micro Commercial Components  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
Two DTC124E chip in a package  
Mounting possible with SOT-363 automatic mounting machines.  
Transistor elements are independent, eliminating interference.  
Case Material: Molded Plastic. UL Flammability  
Digital Transistors  
Classification Rating 94V-0 and MSL Rating 1  
Absolute maximum ratings @ 25?  
Symbol  
VCC  
VIN  
Parameter  
Supply voltage  
Input voltage  
Value  
50  
-10~40  
30  
100  
150  
Unit  
V
V
SOT-363  
IO  
Output current  
mA  
mA  
mW  
?
IC(MAX)  
Pd  
Tj  
Collector Current  
Power dissipation  
Junction temperature  
Storage temperature  
G
150  
-55~150  
Tstg  
?
C
B
Electrical Characteristics @ 25?  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Parameter  
Input voltage (VCC=5V, IO=100µA)  
(VO=0.2V, IO=5mA)  
Min  
---  
3.0  
---  
---  
---  
56  
15.4  
0.8  
Typ  
---  
---  
0.1  
---  
---  
---  
22  
1.0  
Max  
0.5  
---  
0.3  
0.36  
0.5  
---  
Unit  
V
V
V
mA  
µA  
A
H
Output voltage (IO/II=10mA/0.5mA)  
Input current (VI=5V)  
M
K
IO(off)  
GI  
R1  
Output current (VCC=50V, VI=0)  
DC current gain (VO=5V, IO=5mA)  
Input resistance  
J
D
L
28.6  
1.2  
KΩ  
R2/R1  
Resistance ratio  
Transition frequency  
(VCE=10V, IE=-5mA, f=100MHz)  
fT  
---  
250  
---  
MHz  
DIMENSIONS  
Equivalent circuit  
INCHES  
MM  
DIM  
A
MIN  
.006  
.045  
.085  
MAX  
.014  
.053  
.096  
MIN  
0.15  
1.15  
2.15  
MAX  
0.35  
1.35  
2.45  
NOTE  
B
C
D
G
H
J
.026  
0.65Nominal  
.047  
.071  
---  
.055  
.087  
.004  
.043  
.018  
.006  
1.20  
1.80  
---  
1.40  
2.20  
0.10  
1.10  
0.46  
0.15  
K
.035  
.010  
.003  
0.90  
0.26  
0.08  
L
M
Marking :H1  
www.mccsemi.com  
1 of 3  
Revision:  
1
20102/05  

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