Datasheet > UMD6N

UMD6N

更新时间： 2023-12-06 20:02:08

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	806K
描述
SOT-363

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数据手册

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UMD6N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

UMD6N

Dual Digital Transistors (NPN+PNP)

SOT-363

FEATURES

DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package.

Transistor elements are independent, eliminating interference.

Mounting cost and area can be cut in half.

MARKING:D6

Absolute maximum ratings(Ta=25℃)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_C

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

100

150

Collector Power dissipation

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

℃

Electrical characteristics (Ta=25℃)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

Min.

Typ

Max.

Unit

Conditions

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=50μA

I_C=1mA

I_E=50μA

V_CB=50V

0.5

μA

Emitter cut-off current

I_EBO

V_EB=4V

Collector-emitter saturation voltage

DC current transfer ratio

V_CE(sat)

h_FE

0.3

I_C=5mA,I_B=0.25mA

V_CE=5V,I_C=1mA

100

600

6.11

Input resistance

R₁

3.29

4.7

KΩ

Transition frequency

f_T

250

MHz

V_CE=10V ,I_E=-5mA,f=100MHz

www.jscj-elec.com

Rev. - 2.0

12 3 4 5

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