Datasheet > UMD5N

UMD5N

更新时间： 2024-09-24 08:24:15

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体数字晶体管
页数	文件大小	规格书
2页	659K
描述
General pur p ose transistors (dual digital transistors)

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中文翻译

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UMD5N 数据手册

UMD5N

General purpose transistors (dual digital transistors)

FEATURES

Both the DTA143X chip and DTC144E chip in a package

Mounting possible with SOT-363 automatic mounting machines

Transistor elements are independent, eliminating interference

Mounting cost and area be cut in half

SOT-363

Marking: D5

Equivalent circuit

DTr1

Absolute maximum ratings(Ta=25℃)

Parameter

Supply voltage

Input voltage

Symbol

V_CC

V_IN

Limits

Unit

-10~+40

I_O

Output current

I_C(MAX)

100

Power dissipation

Junction temperature

Storage temperature

150

℃

T_j

150

Tstg

-55~150

Electrical characteristics (Ta=25℃)

Parameter

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Min.

Typ

Max.

Unit

Conditions

V_CC=5V ,I_O=100μA

0.5

Input voltage

V_O=0.3V ,I_O=2mA

I_O/I_I=10mA/0.5mA

V_I=5V

Output voltage

Input current

0.3

0.18

0.5

μA

Output current

I_O(off)

G_I

V_CC=50V, V_I=0

V_O=5V ,I_O=5mA

DC current gain

Input resistance

Resistance ratio

Transition frequency

32.9

0.8

R₁

61.1

1.2

KΩ

R₂/R₁

f_T

250

MHz

V_O=10V ,I_O=5mA,f=100MHz

DTr2

Absolute maximum ratings(Ta=25℃)

Parameter

Supply voltage

Input voltage

Symbol

V_CC

V_IN

Limits

Unit

-50

-20~+7

-100

I_O

Output current

I_C(MAX)

-100

Power dissipation

Junction temperature

Storage temperature

150

℃

T_j

150

Tstg

-55~150

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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