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UMD3N

更新时间: 2024-09-23 22:17:27
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
4页 77K
描述
General purpose (dual digital transistors)

UMD3N 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.75最大集电极电流 (IC):0.05 A
最小直流电流增益 (hFE):30JESD-609代码:e2
元件数量:2极性/信道类型:NPN/PNP
最大功率耗散 (Abs):0.15 W子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Copper (Sn/Cu)
晶体管元件材料:SILICONBase Number Matches:1

UMD3N 数据手册

 浏览型号UMD3N的Datasheet PDF文件第2页浏览型号UMD3N的Datasheet PDF文件第3页浏览型号UMD3N的Datasheet PDF文件第4页 
EMD3 / UMD3N / IMD3A  
Transistors  
General purpose  
(dual digital transistors)  
EMD3 / UMD3N / IMD3A  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Both the DTA114E chip and DTC114E chip in a EMT  
or UMT or SMT package.  
EMD3  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
2) Mounting possible with EMT3 or UMT3 or SMT3  
automatic mounting machines.  
1.2  
1.6  
3) Transistor elements are independent, eliminating  
interference.  
Each lead has same dimensions  
4) Mounting cost and area can be cut in half.  
ROHM : EMT6  
Abbreviated symbol : D3  
UMD3N  
zStructure  
Epitaxial planar type  
1.25  
2.1  
NPN / PNP silicon transistor (Built-in resistor type)  
0.1Min.  
Each lead has same dimensions  
The following characteristics apply to both the DTr1 and  
DTr2, however, the “” sign on DTr2 values for the PNP  
type have been omitted.  
ROHM  
EIAJ  
:
UMT6  
:
SC-88  
Abbreviated symbol : D3  
IMD3A  
zEquivalent circuits  
1.6  
2.8  
EMD3 / UMD3N  
IMD3A  
(4) (5) (6)  
R
(3) (2) (1)  
R
1
R2  
1
R2  
DTr  
1
DTr  
1
0.3to0.6  
DTr2  
DTr2  
Each lead has same dimensions  
R
1
=10kΩ  
=10kΩ  
R
1
=10kΩ  
=10kΩ  
R2  
R
2
R1  
ROHM  
EIAJ  
:
SMT6  
SC-74  
R2  
R
2
R1  
(3) (2) (1)  
:
(4) (5) (6)  
Abbreviated symbol : D3  
zAbsolute maximum ratings (Ta=25°C)  
Limits  
Parameter  
Symbol  
Unit  
V
Supply voltage  
V
CC  
50  
10  
Input voltage  
VIN  
V
40  
I
O
50  
Output current  
mA  
mW  
I
C (Max.)  
100  
1
2
EMD3, UMD3N  
150 (TOTAL)  
300 (TOTAL)  
150  
Power  
Pd  
dissipation  
IMD3A  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55∼+150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
Rev.A  
1/3  

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