Datasheet > UMD3N

UMD3N

更新时间： 2024-09-25 14:54:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	804K
描述
SOT-363

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中文翻译

获取价格

技术参数
数据手册

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UMD3N 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

UMD3N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

DUAL DIGITAL TRANSISTOR (NPN+PNP)

UMD3N

SOT-363

FEATURES

DTA114E and DTC114E transistors are built-in a package.

Transistor elements are independent, eliminating interference.

Mounting cost and area can be cut in half.

MARKING:D3

Absolute maximum ratings (Ta=25℃)

Parameter

Symbol

Limit

Unit

Supply voltage

Input voltage

V_CC

V_IN

-10~40

I_O

Output current

℃

I_C(MAX)

100

Power dissipation

150

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

Note 1: 150mW per element must not be exceeded.

Electrical characteristics (Ta=25℃)

Parameter

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Min.

Typ

Max.

Unit

Conditions

V_CC=5V ,I_O=100µA

V_O=0.3V ,I_O=10mA

I_O/I_I=10mA/0.5mA

V_I=5V

0.5

Input voltage

Output voltage

Input current

0.3

0.88

0.5

μA

Output current

I_O(off)

G_I

V_CC=50V, V_I=0

V_O=5V,I_O=5mA

DC current gain

Input resistance

Resistance ratio

Transition frequency

Ω

R₁

R₂/R₁

f_T

0.8

1.2

250

MHz

V_CE=10V ,I_E=-5mA,f=100MHz

www.jscj-elec.com

Rev. - 2.0

12 3 4 5

中文翻译

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