Datasheet > UMD3N

UMD3N

更新时间： 2024-09-24 08:24:15

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体数字晶体管
页数	文件大小	规格书
1页	295K
描述
DUAL DIGITAL TRANSISTOR (NPN+ PNP)

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中文翻译

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UMD3N 数据手册

UMD3N

DUAL DIGITAL TRANSISTOR (NPN+ PNP)

SOT-363

FEATURES

DTA114E and DTC114E transistors are built-in a package.

Transistor elements are independent, eliminating interference.

Mounting cost and area can be cut in half.

External circuit

MARKING:D3

Absolute maximum ratings (Ta=25℃)

Parameter

Symbol

Limits

Unit

Supply voltage

Input voltage

V_CC

V_IN

-10~40

I_O

Output current

I_C(MAX)

100

Power dissipation

Junction temperature

Storage temperature

150(TOTAL)

150

℃

Tstg

-55~150

℃

Electrical characteristics (Ta=25℃)

Parameter

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Min.

Typ

Max.

Unit

Conditions

V_CC=5V ,I_O=100µA

V_O=0.3V ,I_O=10mA

I_O/I_I=10mA/0.5mA

V_I=5V

0.5

Input voltage

Output voltage

Input current

0.3

0.88

0.5

μA

Output current

I_O(off)

G_I

V_CC=50V, V_I=0

V_O=5V,I_O=5mA

DC current gain

Input resistance

Resistance ratio

Transition frequency

R₁

KΩ

R₂/R₁

f_T

0.8

1.2

250

MHz

V_CE=10V ,I_E=-5mA,f=100MHz

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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