生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.73 |
其他特性: | DIGITAL, BUILT IN BIAS RESISTOR | 最大集电极电流 (IC): | 0.03 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 56 | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN AND PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UMD2TR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon | |
UMD3 | ROHM |
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Diodes | |
UMD34N | BL Galaxy Electrical |
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50V,100mA,NPN Bipolar Digital Transistor 50V,100mA,PNP Bipolar Digital Transistor | |
UMD3N | HTSEMI |
获取价格 |
DUAL DIGITAL TRANSISTOR (NPN+ PNP) | |
UMD3N | SECOS |
获取价格 |
Multi-Chip Digital Transistor | |
UMD3N | ROHM |
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General purpose (dual digital transistors) | |
UMD3N | MCC |
获取价格 |
Tape : 3K/Reel, 120K/Ctn; | |
UMD3N | CJ |
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SOT-363 | |
UMD3N | YANGJIE |
获取价格 |
SOT-363 | |
UMD3N | BL Galaxy Electrical |
获取价格 |
50V,50mA,NPN Bipolar Digital Transistor 50V,50mA,PNP Bipolar Digital Transistor |