UMD2NTR

更新时间： 2024-01-12 15:22:21

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
4页	77K
描述
General purpose (dual digital transistors)

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中文翻译

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数据手册
替代型号

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UMD2NTR 数据手册

EMD2 / UMD2N / IMD2A

Transistors

General purpose

(dual digital transistors)

EMD2 / UMD2N / IMD2A

zFeatures

zExternal dimensions (Unit : mm)

1) Both the DTA124E chip and DTC124E chip in a EMT

or UMT or SMT package.

EMD2

2) Mounting possible with EMT6 or UMT6 or SMT6

automatic mounting machines.

( )

1.2

1.6

3) Transistor elements are independent, eliminating

interference.

4) Mounting cost and area can be cut in half.

Each lead has same dimensions

ROHM : EMT6

UMD2N

Abbreviated symbol : D2

zStructure

Epitaxial planar type

NPN / PNP silicon transistor (Built-in resistor type)

1.25

2.1

The following characteristics apply to both the DTr1 and

DTr2, however, the “−” sign on DTr2 values for the PNP

type have been omitted.

0.1Min.

Each lead has same dimensions

ROHM : UMT6

EIAJ : SC-88

Abbreviated symbol : D2

zEquivalent circuit

IMD2A

EMD2 / UMD2N

IMD2A

(4) (5) (6)

(3) (2) (1)

1.6

2.8

DTr

DTr2

=22kΩ

(3) (2) (1)

(4) (5) (6)

0.3to0.6

Each lead has same dimensions

ROHM : SMT6

EIAJ : SC-74

zAbsolute maximum ratings (Ta = 25°C)

Abbreviated symbol : D2

Limits

Parameter

Supply voltage

Symbol

Unit

Input voltage

VIN

−10

Output current

C (Max.)

100

EMD2, UMD2N

150 (TOTAL)

300 (TOTAL)

150

∗

Power

dissipation

IMD2A

∗

Junction temperature

Storage temperature

˚C

Tstg

−55 to +150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

∗

Rev.A

1/3

12 3 4

中文翻译

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UMD2NTR 替代型号

型号	品牌	替代类型	描述	数据表
MUN5312DW1T1G	ONSEMI	功能相似	Dual Bias Resistor Transistors

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