是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.72 |
Is Samacsys: | N | 其他特性: | DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.03 A | 集电极-发射极最大电压: | 50 V |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 56 |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e2 |
元件数量: | 2 | 端子数量: | 6 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN AND PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin/Copper (Sn/Cu) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
VCEsat-Max: | 0.3 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UMD2N-TP | MCC |
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暂无描述 | |
UMD2N-TP-HF | MCC |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
UMD2NTR | ROHM |
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General purpose (dual digital transistors) | |
UMD2TL | ROHM |
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Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon | |
UMD2TN | ROHM |
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Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon | |
UMD2TR | ROHM |
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Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon | |
UMD3 | ROHM |
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Diodes | |
UMD34N | BL Galaxy Electrical |
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50V,100mA,NPN Bipolar Digital Transistor 50V,100mA,PNP Bipolar Digital Transistor | |
UMD3N | HTSEMI |
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DUAL DIGITAL TRANSISTOR (NPN+ PNP) | |
UMD3N | SECOS |
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Multi-Chip Digital Transistor |