Datasheet > UMD2N_1

UMD2N_1

更新时间： 2024-01-01 21:07:14

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
4页	100K
描述
General purpose (dual digital transistors)

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中文翻译

获取价格

数据手册

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UMD2N_1 数据手册

EMD2 / UMD2N / IMD2A

Transistors

General purpose

(dual digital transistors)

EMD2 / UMD2N / IMD2A

zFeatures

zDimensions (Unit : mm)

1) Both the DTA124E chip and DTC124E chip in a EMT

or UMT or SMT package.

EMD2

2) Mounting possible with EMT6 or UMT6 or SMT6

automatic mounting machines.

(6) (5) (4)

3) Transistor elements are independent, eliminating

interference.

(1) (2) (3)

4) Mounting cost and area can be cut in half.

Each lead has same dimensions

ROHM : EMT6

UMD2N

Abbreviated symbol : D2

zStructure

Epitaxial planar type

(6) (5) (4)

NPN / PNP silicon transistor (Built-in resistor type)

(1) (2) (3)

The following characteristics apply to both the DTr1 and

DTr2, however, the “−” sign on DTr2 values for the PNP

type have been omitted.

Each lead has same dimensions

ROHM : UMT6

EIAJ : SC-88

Abbreviated symbol : D2

IMD2A

zEquivalent circuit

(4) (5) (6)

EMD2 / UMD2N

IMD2A

(4) (5) (6)

(3) (2) (1)

DTr

DTr1

DTr2

=22kΩ

(3) (2)

(1)

(3) (2) (1)

(4) (5) (6)

ROHM : SMT6

EIAJ : SC-74

Each lead has same dimensions

Abbreviated symbol : D2

zAbsolute maximum ratings (Ta = 25°C)

Limits

Parameter

Supply voltage

Symbol

Unit

Input voltage

VIN

−10

Output current

C (Max.)

100

EMD2, UMD2N

150 (TOTAL)

300 (TOTAL)

150

∗

Power

dissipation

IMD2A

∗

Junction temperature

Storage temperature

˚C

Tstg

−55 to +150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

∗

Rev.C

1/3

12 3 4

中文翻译

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