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UMD2N_1 PDF预览

UMD2N_1

更新时间: 2024-01-01 21:07:14
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
4页 100K
描述
General purpose (dual digital transistors)

UMD2N_1 数据手册

 浏览型号UMD2N_1的Datasheet PDF文件第2页浏览型号UMD2N_1的Datasheet PDF文件第3页浏览型号UMD2N_1的Datasheet PDF文件第4页 
EMD2 / UMD2N / IMD2A  
Transistors  
General purpose  
(dual digital transistors)  
EMD2 / UMD2N / IMD2A  
zFeatures  
zDimensions (Unit : mm)  
1) Both the DTA124E chip and DTC124E chip in a EMT  
or UMT or SMT package.  
EMD2  
2) Mounting possible with EMT6 or UMT6 or SMT6  
automatic mounting machines.  
(6) (5) (4)  
3) Transistor elements are independent, eliminating  
interference.  
(1) (2) (3)  
4) Mounting cost and area can be cut in half.  
Each lead has same dimensions  
ROHM : EMT6  
UMD2N  
Abbreviated symbol : D2  
zStructure  
Epitaxial planar type  
(6) (5) (4)  
NPN / PNP silicon transistor (Built-in resistor type)  
(1) (2) (3)  
The following characteristics apply to both the DTr1 and  
DTr2, however, the “” sign on DTr2 values for the PNP  
type have been omitted.  
Each lead has same dimensions  
ROHM : UMT6  
EIAJ : SC-88  
Abbreviated symbol : D2  
IMD2A  
zEquivalent circuit  
(4) (5) (6)  
EMD2 / UMD2N  
IMD2A  
(4) (5) (6)  
(3) (2) (1)  
R1  
R2  
R1  
R2  
DTr  
1
DTr1  
DTr2  
DTr2  
R
1
=22kΩ  
=22kΩ  
R
1
=22kΩ  
=22kΩ  
(3) (2)  
(1)  
R
2
R2  
R
1
R
2
R
2
R
1
(3) (2) (1)  
(4) (5) (6)  
ROHM : SMT6  
EIAJ : SC-74  
Each lead has same dimensions  
Abbreviated symbol : D2  
zAbsolute maximum ratings (Ta = 25°C)  
Limits  
Parameter  
Supply voltage  
Symbol  
Unit  
V
V
CC  
50  
40  
Input voltage  
VIN  
V
10  
30  
I
O
Output current  
mA  
I
C (Max.)  
100  
1
2
EMD2, UMD2N  
150 (TOTAL)  
300 (TOTAL)  
150  
mW  
Power  
dissipation  
Pd  
IMD2A  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55 to +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
Rev.C  
1/3  

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