是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.35 |
其他特性: | BUILT IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 30 | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN AND PNP | 最大功率耗散 (Abs): | 0.15 W |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UMD2NTR | ROHM |
获取价格 |
General purpose (dual digital transistors) | |
UMD2TL | ROHM |
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Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon | |
UMD2TN | ROHM |
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Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon | |
UMD2TR | ROHM |
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Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon | |
UMD3 | ROHM |
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Diodes | |
UMD34N | BL Galaxy Electrical |
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50V,100mA,NPN Bipolar Digital Transistor 50V,100mA,PNP Bipolar Digital Transistor | |
UMD3N | HTSEMI |
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DUAL DIGITAL TRANSISTOR (NPN+ PNP) | |
UMD3N | SECOS |
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Multi-Chip Digital Transistor | |
UMD3N | ROHM |
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General purpose (dual digital transistors) | |
UMD3N | MCC |
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Tape : 3K/Reel, 120K/Ctn; |