Datasheet > UMD10N

UMD10N

更新时间： 2024-09-17 14:53:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	715K
描述
SOT-363

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中文翻译

获取价格

数据手册

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UMD10N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

Dual Digital Transistors (NPN+PNP)

UMD10N

SOT-363

FEATURES

Both the DTC123J chip and DTA123J chip in a package

Mounting possible with SOT-363 automatic mounting machines

Transistor elements are independent, eliminating interference

Mounting cost and area be cut in half

Marking: D10

T_R1Absolute maximum ratings (Ta=25℃)

Parameter

Supply voltage

Input voltage

Symbol

V_CC

Value

Unit

V_IN

-5~12

I_O

100

150

℃

Output current

I_C(MAX)

Power dissipation

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

T_R1Electrical characteristics (Ta=25℃)

Parameter

Symbol

Min.

Typ

Max.

Unit

Conditions

V_I(off)

V_I(on)

V_O(on)

I_I

0.5

V_CC=5V, I_O=100μA

Input voltage

1.1

0.3

3.6

0.5

V_O=0.3V, I_O=5mA

Output voltage

Input current

0.1

I_O/I_I=5mA/0.25mA

μA

V_I=5V

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

I_O(off)

G_I

V_CC=50V, V_I=0

1.54

V_O=5V, I_O=10mA

R₁

2.2

2.86

KΩ

R₂/R₁

f_T

250

MHz

V_CE=10V, I_E=5mA, f=100MHz

www.jscj-elec.com

Rev. - 2.0

12 3 4 5 6

中文翻译

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