Datasheet > UMB4S

UMB4S

更新时间： 2024-10-31 17:15:27

品牌	Logo	应用领域
星海 - CZSTARSEA		/
页数	文件大小	规格书
2页	53K
描述
MBS

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中文翻译

获取价格

数据手册

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UMB4S 数据手册

UMB2S THRU UMB10S

GLASS PASSIVATED ULTRA FAST RECOVERY BRIDGE RECTIFIERS

Voltage Range - 200 to 1000 Volts Current - 0.5/0.8 Ampere

MBS

FEATURES

.193(4.90)

.177(4.50)

Ideal for printed circuit board

Reliable low cost construction utilizing

molded plastic technique

.033(0.84)

.022(0.56)

High temperature soldering guaranteed:

260 / 10 seconds at 5 lbs., (2.3kg) tension

Small size, simple installation

Leads solderable per MIL-STD-202,

Method 208

.276(7.0)

MAX

.157(4.00)

.142(3.60)

High surge current capability

.102(2.60)

.087(2.20)

Glass passivated chip junction

Green compound(halogen&Sb2O3 free)

.014(0.35)

.006(0.15)

MECHANICAL DATA

.053(1.53)

.037(0.95)

.106(2.70)

.090(2.30)

.118(3.0)

MAX

Case: Molded plastic body

Terminals: Plated leads solderable per MIL-STD-750,

Method 2026

.043(1.10)

.028(0.70)

.008(0.20)

MAX

.083(2.12)

.043(1.10)

Polarity: Polarity symbols marked on case

Mounting Position: Any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load, for capacitive load derate current by 20%.

SYMBOLS

UNITS

UMB8S UMB10S

UMB2S UMB4S UMB6S

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

Maximum average forward rectified current

On glass-epoxy P.C.B.(Note1)

On aluminum substrate(Note2)

Peak forward surge current,

1000

IF(AV)

0.5

0.8

IFSM

8.3ms single half sine-wave superimposed on

rated load

Maximum instantaneous forward voltage drop

per leg at 0.4A

1.7

1.0

1.4

Maximum DC reverse current

at rated DC blocking voltage

TA=25

5.0

TA=125

500

R JL

Typical thermal resistance(NOTE 3)

Maximum reverse recovery time

R JA

(NOTE 4)

trr

Operating temperature range

storage temperature range

-55 to +150

TSTG

NOTES:1.On glass epoxy P.C.B. mounted on 0.05x0.05''(1.3x1.3mm) pads.

2.On aluminum substrate P.C.B. with an area of 0.8''x0.8''(20x20mm) mounted on 0.05X0.05''(1.3X1.3mm) solder pad.

3.Thermal resistance form junction to ambient and junction to lead mounted on P.C.B. with 0.2X0.2''(5X5mm)

copper pads.

4.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A.

DN:S15E03A1

STAR SEA

中文翻译

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与UMB4S相关器件

型号	品牌	获取价格	描述	数据表
UMB4TL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOL
UMB4TN	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOL
UMB4TR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOL
UMB5	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 30MA I(C) \| SO
UMB5N	ROHM	获取价格	General purpose (dual digital transistors)
UMB5NTL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMO
UMB5NTN	ROHM	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMO
UMB5NTR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SC-88,
UMB5TN	ROHM	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMO
UMB6	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 30MA I(C) \| SO

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