Datasheet > UMB3N

UMB3N

更新时间： 2023-12-06 20:07:46

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	643K
描述
SOT-363

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数据手册

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UMB3N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

Dual Digital Transistors (PNP+PNP)

UMB3N

SOT-363

FEATURES

Two DTA143T chips in a package

Mounting possible with SOT-363 automatic mounting machines

Transistor elements are independent, eliminating interference

Mounting cost and area be cut in half

Marking: B3

Absolute maximum ratings(Ta=25℃)

Parameter

Symbol

Value

-50

-5

-100

150

Units

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_C

Collector power

P_C

Operation Junction and

Storage Temperature Range

-55~+150

T_J,T_stg

℃

Electrical characteristics (Ta=25℃)

Symb

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current transfer ratio

Min

-50

-5

Typ

Max Unit

Conditions

I_C=-50μA

I_C=-1mA

I_E=-50μA

V_CB=-50V

V_EB=-4V

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_EBO

V_CE(sat)

h_FE

-0.5

-0.3

600

6.11

μA

I_C=-5mA,I_B=-0.25mA

V_CE=-5V,I_C=-1mA

100

3.29

Input resistance

R₁

4.7

KΩ

V_CE=-10V,I_E=5mA,f=100MHz

Transition frequency

f_T

250

MHz

www.jscj-elec.com

Rev. - 2.0

12 3 4

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