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UMB11NFHATN PDF预览

UMB11NFHATN

更新时间: 2024-01-09 03:52:15
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
3页 80K
描述
Small Signal Bipolar Transistor,

UMB11NFHATN 技术参数

生命周期:Obsolete包装说明:MINIMOLD, UM6, 6 PIN
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
其他特性:DIGITAL, BUILT IN BIAS RESISTOR最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON

UMB11NFHATN 数据手册

 浏览型号UMB11NFHATN的Datasheet PDF文件第2页浏览型号UMB11NFHATN的Datasheet PDF文件第3页 
EMB11 / UMB11N / IMB11A  
Transistors  
General purpose  
(dual digital transistors)  
EMB11 / UMB11N / IMB11A  
zFeatures  
zExternal dimensions (Unit : mm)  
1) Two DTA114E chips in a EMT or UMT or SMT  
package.  
EMB11  
2) Mounting possible with EMT3 or UMT3 or SMT3  
automatic mounting machines.  
3) Transistor elements are independent, eliminating  
interference.  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
1.2  
1.6  
4) Mounting cost and area can be cut in half.  
Each lead has same dimensions  
ROHM : EMT6  
UMB11N  
Abbreviated symbol : B11  
zStructure  
Epitaxial planar type  
PNP silicon transistor (Built-in resistor type)  
1.25  
2.1  
The following characteristics apply to both DTr1 and  
DTr2.  
0.1Min.  
Each lead has same dimensions  
ROHM : UMT6  
EIAJ : SC-88  
Abbreviated symbol : B11  
zEquivalent circuit  
IMB11A  
EMB11 / UMB11N  
IMB11A  
(4) (5) (6)  
(3) (2) (1)  
R1  
R2  
R1  
R2  
DTr  
1
DTr1  
DTr2  
DTr2  
R
1
=10k  
=10kΩ  
R
1
=10kΩ  
=10kΩ  
1.6  
2.8  
R
2
R2  
R
1
R
2
R2  
R
1
(3) (2) (1)  
(4) (5) (6)  
0.3to0.6  
Each lead has same dimensions  
ROHM : SMT6  
EIAJ : SC-74  
zAbsolute maximum ratings (Ta = 25°C)  
Abbreviated symbol : B11  
Parameter  
Supply voltage  
Symbol  
Limits  
50  
Unit  
VCC  
V
40  
Input voltage  
VIN  
V
10  
I
O
50  
Output current  
mA  
I
C (Max.)  
100  
1
2
EMB11, UMB11N  
150 (TOTAL)  
300 (TOTAL)  
150  
Power  
dissipation  
Pd  
mW ∗  
IMB11A  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55 to +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
Rev.A  
1/2  

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